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FDPC3D5N025X9D PowerTrench Power Clip October 2016 FDPC3D5N025X9D PowerTrench Power Clip 25V Symmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max r = 3.01 m at V = 10 V, I = 18 A dual package. The switch node has been internally connected to DS(on) GS D enable easy placement and routing of synchronous buck Max r = 3.67 m at V = 4.5 V, I = 16 A DS(on) GS D converters. The control MOSFET (Q2) and synchronous Q2: N-Channel (Q1) have been designed to provide optimal power efficiency. Max r = 3.01 m at V = 10 V, I = 18 A DS(on) GS D Applications Max r = 3.67 m at V = 4.5 V, I = 16 A DS(on) GS D Computing Low Inductance Packaging Shortens Rise/Fall Times, Result- ing in Lower Switching Losses Communications General Purpose Point of Load MOSFET Integration Enables Optimum Layout for Lower Cir- cuit Inductance and Reduced Switch Node Ringing RoHS Compliant PIN1 GND SW GND SW GND SW LSG SW LSG V+ V+ SW SW V+ PIN1 V+ HSG V+ HSG Top Bottom Power Clip 33 Symmetric Pin Name Description Pin Name Description Pin Name Description Switching Node, 1,11,12 GND(LSS) Low Side Source 3,4,5,6 V+(HSD) High Side Drain 8,9,10 SW Low Side Drain 2 LSG Low Side Gate 7 HSG High Side Gate MOSFET Maximum Ratings T = 25 C unless otherwise noted. A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 25 25 V DS V Gate to Source Voltage 12 12 V GS Drain Current -Continuous T = 25 C (Note5) 74 74 C -Continuous T = 100 C (Note5) 47 47 C I A D Note1a Note1b -Continuous T = 25 C 18 18 A -Pulsed T = 25 C (Note 4) 349 349 A E Single Pulse Avalanche Energy (Note 3) 96 96 mJ AS Power Dissipation for Single Operation T = 25 C 26 26 C P W D Note1a Note1b Power Dissipation for Single Operation T = 25 C 1.8 1.8 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 4.8 4.8 JC Note1a Note1b R Thermal Resistance, Junction to Ambient 70 70 C/W JA Note1c Note1d R Thermal Resistance, Junction to Ambient 135 135 JA 2016 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDPC3D5N025X9D Rev.1.0