X-On Electronics has gained recognition as a prominent supplier of FDPC3D5N025X9D MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDPC3D5N025X9D MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDPC3D5N025X9D ON Semiconductor

FDPC3D5N025X9D electronic component of ON Semiconductor
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Part No.FDPC3D5N025X9D
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET Gaming/DT/Notebook/ NVDC/Server
Datasheet: FDPC3D5N025X9D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.5849
30000 : USD 0.5613
300000 : USD 0.55
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.5366
10 : USD 1.2805
100 : USD 1.0188
500 : USD 0.8863
1000 : USD 0.7772
3000 : USD 0.7082
9000 : USD 0.6814
24000 : USD 0.6803
N/A

Obsolete
   
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We are delighted to provide the FDPC3D5N025X9D from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDPC3D5N025X9D and other electronic components in the MOSFETs category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDPC3D5N025X9D PowerTrench Power Clip October 2016 FDPC3D5N025X9D PowerTrench Power Clip 25V Symmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max r = 3.01 m at V = 10 V, I = 18 A dual package. The switch node has been internally connected to DS(on) GS D enable easy placement and routing of synchronous buck Max r = 3.67 m at V = 4.5 V, I = 16 A DS(on) GS D converters. The control MOSFET (Q2) and synchronous Q2: N-Channel (Q1) have been designed to provide optimal power efficiency. Max r = 3.01 m at V = 10 V, I = 18 A DS(on) GS D Applications Max r = 3.67 m at V = 4.5 V, I = 16 A DS(on) GS D Computing Low Inductance Packaging Shortens Rise/Fall Times, Result- ing in Lower Switching Losses Communications General Purpose Point of Load MOSFET Integration Enables Optimum Layout for Lower Cir- cuit Inductance and Reduced Switch Node Ringing RoHS Compliant PIN1 GND SW GND SW GND SW LSG SW LSG V+ V+ SW SW V+ PIN1 V+ HSG V+ HSG Top Bottom Power Clip 33 Symmetric Pin Name Description Pin Name Description Pin Name Description Switching Node, 1,11,12 GND(LSS) Low Side Source 3,4,5,6 V+(HSD) High Side Drain 8,9,10 SW Low Side Drain 2 LSG Low Side Gate 7 HSG High Side Gate MOSFET Maximum Ratings T = 25 C unless otherwise noted. A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 25 25 V DS V Gate to Source Voltage 12 12 V GS Drain Current -Continuous T = 25 C (Note5) 74 74 C -Continuous T = 100 C (Note5) 47 47 C I A D Note1a Note1b -Continuous T = 25 C 18 18 A -Pulsed T = 25 C (Note 4) 349 349 A E Single Pulse Avalanche Energy (Note 3) 96 96 mJ AS Power Dissipation for Single Operation T = 25 C 26 26 C P W D Note1a Note1b Power Dissipation for Single Operation T = 25 C 1.8 1.8 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 4.8 4.8 JC Note1a Note1b R Thermal Resistance, Junction to Ambient 70 70 C/W JA Note1c Note1d R Thermal Resistance, Junction to Ambient 135 135 JA 2016 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDPC3D5N025X9D Rev.1.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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