CMLDM7005
SURFACE MOUNT SILICON www.centralsemi.com
DUAL N-CHANNEL
DESCRIPTION:
ENHANCEMENT-MODE
The CENTRAL SEMICONDUCTOR CMLDM7005
MOSFET
consists of dual N-Channel enhancement-mode silicon
MOSFETs designed for high speed pulsed amplifier
and driver applications. These MOSFETs offer very low
r and low threshold voltage.
DS(ON)
MARKING CODE: CC7
SOT-563 CASE
FEATURES:
ESD protection up to 2kV (Human Body Model)
350mW power dissipation
Very low r
DS(ON)
APPLICATIONS:
Low threshold voltage
Load switch/Level shifting
Logic level compatible
Battery charging
Boost switch Small, SOT-563 surface mount package
Electro-luminescent backlighting
Complementary dual P-Channel device: CMLDM8005
MAXIMUM RATINGS: (T =25C) SYMBOL UNITS
A
Drain-Source Voltage V 20 V
DS
Gate-Source Voltage V 8.0 V
GS
Continuous Drain Current (Steady State - Note 1) I 650 mA
D
Continuous Source Current (Body Diode) I 280 mA
S
Maximum Pulsed Drain Current I 1.3 A
DM
Power Dissipation (Note 1) P 350 mW
D
Power Dissipation (Note 2) P 300 mW
D
Power Dissipation (Note 2) P 150 mW
D
Operating and Storage Junction Temperature T , T -65 to +150 C
J stg
Thermal Resistance (Note 1) 357 C/W
JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25C unless otherwise noted)
A
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I , I V =4.5V, V=0 1.0 A
GSSF GSSR GS DS
I V =16V, V=0 100 nA
DSS DS GS
BV V =0, I=250A 20 V
DSS GS D
V V =V , I=250A 0.5 1.1 V
GS(th) DS GS D
V V =0, I=200mA 1.1 V
SD GS S
r V =4.5V, I=600mA 0.14 0.23
DS(ON) GS D
r V =2.5V, I=500mA 0.2 0.275
DS(ON) GS D
r V =1.8V, I=350mA 0.7
DS(ON) GS D
g V =10V, I=400mA 1.0 S
FS DS D
2
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm
2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm
2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm
R5 (8-June 2015)CMLDM7005
SURFACE MOUNT SILICON
DUAL N-CHANNEL
ENHANCEMENT-MODE
MOSFET
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (T =25C unless otherwise noted)
A
SYMBOL TEST CONDITIONS TYP UNITS
C V =16V, V =0, f=1.0MHz 18 pF
rss DS GS
C V =16V, V =0, f=1.0MHz 100 pF
iss DS GS
C V =16V, V =0, f=1.0MHz 16 pF
oss DS GS
Q V =10V, V =4.5V, I =500mA
g(tot) DS GS D 1.58 nC
Q V =10V, V =4.5V, I =500mA
gs DS GS D 0.17 nC
Q V =10V, V =4.5V, I =500mA
gd DS GS D 0.24 nC
t V =10V, V =4.5V, I =200mA, R =10 10 ns
on DD GS D G
t V =10V, V =4.5V, I =200mA, R =10 25 ns
off DD GS D G
SOT-563 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Source Q1
2) Gate Q1
3) Drain Q2
4) Source Q2
5) Gate Q2
6) Drain Q1
MARKING CODE: CC7
R5 (8-June 2015)
www.centralsemi.com