X-On Electronics has gained recognition as a prominent supplier of CMLDM3737 TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. CMLDM3737 TR MOSFETs are a product manufactured by Central Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CMLDM3737 TR Central Semiconductor

CMLDM3737 TR electronic component of Central Semiconductor
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Part No.CMLDM3737 TR
Manufacturer: Central Semiconductor
Category: MOSFETs
Description: MOSFET 20V Dual N-Ch FET 8.0Vgs 540mA 350mW
Datasheet: CMLDM3737 TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2794 ea
Line Total: USD 0.28 
Availability - 314145
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
314145
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2794
10 : USD 0.2189
100 : USD 0.1771
500 : USD 0.1672
1000 : USD 0.1474
3000 : USD 0.1441
9000 : USD 0.1408
24000 : USD 0.1397
45000 : USD 0.1386

   
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We are delighted to provide the CMLDM3737 TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CMLDM3737 TR and other electronic components in the MOSFETs category and beyond.

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CMLDM3737 SURFACE MOUNT SILICON www.centralsemi.com DUAL N-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM3737 MOSFET consists of dual silicon N-Channel enhancement-mode MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low r and low threshold voltage. DS(ON) MARKING CODE: 7C3 FEATURES: ESD Protection up to 2kV SOT-563 CASE 350mW Power Dissipation Very Low r DS(ON) APPLICATIONS: Low Threshold Voltage Load Switch / Level Shifting Logic Level Compatible Battery Charging Small, SOT-563 Surface Mount Package Boost Switch Electro-luminescent Backlighting Complementary Dual P-Channel Device: CMLDM5757 MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 20 V DS Gate-Source Voltage V 8.0 V GS Continuous Drain Current (Steady State) I 540 mA D Maximum Pulsed Drain Current (tp=10s) I 1.5 A DM Power Dissipation (Note 1) P 350 mW D Power Dissipation (Note 2) P 300 mW D Power Dissipation (Note 3) P 150 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance (Note 1) 357 C/W JA ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25C) A SYMBOL TEST CONDITIONS MIN MAX UNITS I , I V =4.5V, V=0 5.0 A GSSF GSSR GS DS I V =16V, V=0 1.0 A DSS DS GS BV V =0, I=250A 20 V DSS GS D V V =V , I=250A 0.45 1.0 V GS(th) DS GS D V V =0, I=350mA 1.2 V SD GS S r V =4.5V, I=540mA 0.55 DS(ON) GS D r V =2.5V, I=500mA 0.7 DS(ON) GS D r V =1.8V, I=350mA 0.9 DS(ON) GS D C V =16V, V =0, f=1.0MHz 20 pF rss DS GS C V =16V, V =0, f=1.0MHz 150 pF iss DS GS C V =16V, V =0, f=1.0MHz 25 pF oss DS GS 2 Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm 2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm 2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm R3 (8-June 2015)CMLDM3737 SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (T =25C) A SYMBOL TEST CONDITIONS TYP UNITS Q V =10V, V =4.5V, I =500mA g(tot) DS GS D 1.58 nC Q V =10V, V =4.5V, I =500mA gs DS GS D 0.17 nC Q V =10V, V =4.5V, I =500mA gd DS GS D 0.24 nC t V =10V, V =4.5V, I =540mA, R =10 10 ns on DD GS D G t V =10V, V =4.5V, I =540mA, R=10 25 ns off DD GS D G SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Source Q1 2) Gate Q1 3) Drain Q2 4) Source Q2 5) Gate Q2 6) Drain Q1 MARKING CODE: 7C3 R3 (8-June 2015) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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