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This literature is subject to all applicable copyright laws and is not for resale in any manner.TM FDP55N06 / FDPF55N06 N-Channel UniFET MOSFET October 2013 FDP55N06 / FDPF55N06 TM N-Channel UniFET MOSFET 60 V, 55 A, 2 2 m Features Description TM R = 22 m V = 10 V, I = 27.5 A UniFET MOSFET is Fairchild Semiconductors high voltage D DS(on) GS MOSFET family based on planar stripe and DMOS technology. Low Gate Charge ( Typ. 30 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss ( Typ. 60 pF) provide better switching performance and higher avalanche energy strength. This device family is suitable for switching 100% Avalanche Tested power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D G G D G S D TO-220F TO-220 S S Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FDP55N06 FDPF55N06 Unit V Drain-Source Voltage 60 V DSS I - Continuous (T = 25C) Drain Current 55 55 * A D C - Continuous (T = 100C) 34.8 34.8 * A C I (Note 1) Drain Current - Pulsed 220 220 * A DM V Gate-Source Voltage 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 480 mJ AS I Avalanche Current (Note 1) 55 A AR E (Note 1) Repetitive Avalanche Energy 11.4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 114 48 W D C - Derate above 25C 0.9 0.4 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP55N06 FDPF55N06 Unit R Thermal Resistance, Junction-to-Case, Max. 1.1 2.58 C/W JC R Thermal Resistance, Case-to-Sink, Typ. 0.5 -- C/W JS R Thermal Resistance, Junction-to-Ambient, Max, 62.5 62.5 C/W JA 2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP55N06 / FDPF55N06 Rev. 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