FDP6670AL/FDB6670AL May 2003 FDP6670AL/FDB6670AL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been 80 A, 30 V R = 6.5 m V = 10 V DS(ON) GS designed specifically to improve the overall efficiency of R = 8.5 m V = 4.5 V DS(ON) GS DC/DC converters using either synchronous or conventional switching PWM controllers. Critical DC electrical parameters specified at These MOSFETs feature faster switching and lower elevated temperature gate charge than other MOSFETs with comparable R specifications. DS(ON) High performance trench technology for extremely low R DS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. 175C maximum junction temperature rating It has been optimized for low gate charge, low R DS(ON) and fast switching speed. D D G G G S TO-220 TO-263AB D FDP Series FDB Series S S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS 20 I Drain Current Continuous (Note 1) 80 A D Pulsed (Note 1) 240 P D Total Power Dissipation T = 25C 68 W C 0.45 Derate above 25C W/C T , T Operating and Storage Junction Temperature Range 65 to +175 J STG C Thermal Characteristics R Thermal Resistance, Junction-to-Case 2.2 JC C/W R JA Thermal Resistance, Junction-to-Ambient 62.5 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB6670AL FDB6670AL 13 24mm 800 units FDP6670AL FDP6670AL Tube n/a 45 2003 Fairchild Semiconductor Corporation FDP6670AL/FDB6670AL Rev D(W)FDP6670AL/FDB6670AL Electrical Characteristics T = 25C unless otherwise noted A Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 1) W Single Pulse Drain-Source V = 15 V, I = 80 A 114 mJ DSS DD D Avalanche Energy I Maximum Drain-Source Avalanche 80 A AR Current Off Characteristics BV DrainSource Breakdown Voltage 30 V DSS V = 0 V, I = 250 A GS D BVDSS Breakdown Voltage Temperature I = 250 A, Referenced to 25C mV/C D 24 Coefficient T J I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 1 DSS DS GS A I GateBody Leakage V = 20 V, V = 0 V 100 nA GSS GS DS On Characteristics (Note 2) V Gate Threshold Voltage V = V , I = 250 A 1 1.9 3 V GS(th) DS GS D VGS(th) Gate Threshold Voltage I = 250 A, Referenced to 25C mV/C D 5 Temperature Coefficient T J R Static DrainSource On V = 10 V, I = 40 A DS(on) GS D 5.2 6.5 Resistance V = 4.5 V, I = 37 A GS D 6.5 8.5 m V = 10 V, I = 40 A, T =125C 7.2 9.7 GS D J I OnState Drain Current V = 10 V, V = 10 V 80 A D(on) GS DS g Forward Transconductance V = 10V, I = 40 A 115 S FS DS D Dynamic Characteristics C Input Capacitance 2440 pF iss V = 15 V, V = 0 V, DS GS C Output Capacitance 580 pF oss f = 1.0 MHz C Reverse Transfer Capacitance 250 pF rss R Gate Resistance V = 15 mV, f = 1.0 MHz 1.4 G GS Switching Characteristics (Note 2) t TurnOn Delay Time V = 10V, I = 1 A, 13 23 ns d(on) DD D V = 10 V, R = 6 GS GEN t TurnOn Rise Time 13 23 ns r t TurnOff Delay Time 42 68 ns d(off) tf TurnOff Fall Time 15 27 ns V = 15 V, I = 40 A, Q Total Gate Charge DS D 24 33 nC g V = 5 V GS Q GateSource Charge 7 nC gs Q GateDrain Charge 9 nC gd DrainSource Diode Characteristics and Maximum Ratings I Maximum Continuous DrainSource Diode Forward Current 80 A S DrainSource Diode Forward V V = 0 V, I = 40 A (Note 1) 0.9 1.3 V SD GS S Voltage t Diode Reverse Recovery Time I = 40 A, 34 nS rr F d /d = 100 A/s iF t Q Diode Reverse Recovery Charge 24 nC rr Notes: 1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDP6670AL/FDB6670AL Rev D(W)