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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.TM FDP80N06 N-Channel UniFET MOSFET November 2013 F D P 8 0 N 0 6 TM N-Channel UniFET MOSFET 60 V, 80 A, 1 0 m Features Description TM UniFET MOSFET is Fairchild Semiconductors high voltage R = 8.5 m (Typ.) V = 10 V, I = 40 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 57nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche Low C (Typ. 145pF) rss energy strength. This device family is suitable for switching Fast Switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic Improved dv/dt Capability lamp ballasts. RoHS Compliant D G G D S TO-220 S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage 20 V GSS o 80 - Continuous (T = 25 C) C I Drain Current A D o 65 - Continuous (T = 100 C) C I Drain Current - Pulsed (Note 1) 320 A DM E Single Pulsed Avalanche Energy (Note 2) 480 mJ AS I Avalanche Current (Note 1) 80 A AR E Repetitive Avalanche Energy (Note 1) 17.6 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 176 W C P Power Dissipation D o o - Derate above 25C1.17W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum Lead Temperature for Soldering, o T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter Ratings Units R Thermal Resistance, Junction to Case, Max. 0.85 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2007 Fairchild Semiconductor 1 www.fairchildsemi.com Corporation FDP80N06 Rev. C0