X-On Electronics has gained recognition as a prominent supplier of FDP61N20 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDP61N20 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDP61N20 ON Semiconductor

FDP61N20 electronic component of ON Semiconductor
FDP61N20 ON Semiconductor
FDP61N20 MOSFETs
FDP61N20  Semiconductors

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See Product Specifications
Part No. FDP61N20
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 200V; 38.5A; 417W; TO220AB
Datasheet: FDP61N20 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.2 ea
Line Total: USD 2.2 
Availability - 3986
Ship by Wed. 29 Jan to Fri. 31 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
776
Ship by Fri. 31 Jan to Thu. 06 Feb
MOQ : 25
Multiples : 25
25 : USD 2.7
100 : USD 1.6125
250 : USD 1.4375
800 : USD 1.3875
1600 : USD 1.3875
3200 : USD 1.375
5600 : USD 1.375

153
Ship by Fri. 31 Jan to Thu. 06 Feb
MOQ : 50
Multiples : 50
50 : USD 1.7727
100 : USD 1.6706
250 : USD 1.4788

10
Ship by Fri. 07 Feb to Wed. 12 Feb
MOQ : 1
Multiples : 1
1 : USD 4.2579
10 : USD 2.8683
50 : USD 2.6212
100 : USD 2.3719
500 : USD 2.2568
800 : USD 2.2047

3986
Ship by Wed. 29 Jan to Fri. 31 Jan
MOQ : 1
Multiples : 1
1 : USD 2.2
10 : USD 1.518
100 : USD 1.43
250 : USD 1.32
500 : USD 1.254

2900
Ship by Fri. 31 Jan to Thu. 06 Feb
MOQ : 22
Multiples : 1
22 : USD 2.9228

4656
Ship by Fri. 31 Jan to Thu. 06 Feb
MOQ : 253
Multiples : 1
253 : USD 1.8594
500 : USD 1.7813
1000 : USD 1.6875

145
Ship by Fri. 31 Jan to Thu. 06 Feb
MOQ : 50
Multiples : 50
50 : USD 1.7727
100 : USD 1.6706
250 : USD 1.4788

776
Ship by Fri. 31 Jan to Thu. 06 Feb
MOQ : 25
Multiples : 25
25 : USD 3.38
100 : USD 2.1801
250 : USD 1.8687
800 : USD 1.8038

1552
Ship by Fri. 31 Jan to Thu. 06 Feb
MOQ : 253
Multiples : 1
253 : USD 1.8594
500 : USD 1.7813
1000 : USD 1.6875

   
Manufacturer
Product Category
Technology
Kind Of Package
Polarisation
Mounting
Case
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDP61N20 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDP61N20 and other electronic components in the MOSFETs category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.TM FDP61N20 N-Channel UniFET MOSFET November 2013 FDP61N20 TM N-Channel UniFET MOSFET 200 V, 61 A, 41 m Features Description TM R = 34 m (Typ.) V = 10 V, I = 30.5 A UniFET MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 58 nC) This MOSFET is tailored to reduce on-state resistance, and to Low C (Typ. 80 pF) rss provide better switching performance and higher avalanche 100% Avalanche Tested energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic Applications lamp ballasts. PDP TV Lighting Uninterruptible Power Supply AC-DC Power Supply D G G D S TO-220 S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FDP61N20 Unit V Drain-Source Voltage 200 V DSS I Drain Current - Continuous (T = 25C) 61 A D C - Continuous (T = 100C) 38.5 A C (Note 1) I Drain Current - Pulsed 244 A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 1440 mJ AS (Note 1) I Avalanche Current 61 A AR (Note 1) E Repetitive Avalanche Energy 41.7 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 417 W D C - Derate Above 25C 3.3 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Thermal Characteristics Symbol Parameter FDP61N20 Unit R Thermal Resistance, Junction-to-Case, Max. 0.3 JC C/W R Thermal Resistance, Junction-to-Ambient, Max. 62.5 JA 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDP61N20 Rev. C1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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