MOSFET Single, P-Channel, POWERTRENCH , Logic Level FDN340P General Description www.onsemi.com This P Channel Logic Level MOSFET is produced using ONSemiconductor advanced POWERTRENCH process that has been especially tailored to minimize the onstate resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and dcdc conversion. SOT23 CASE 527AG Features 2 A, 20 V D R = 70 m V = 4.5 V DS(ON) GS R = 110 m V = 2.5 V DS(ON) GS Low Gate Charge (7.2 nC Typical) High Performance Trench Technology for Extremely Low R DS(ON) High Power Version of Industry Standard SOT23 Package. Identical G S PinOut to SOT23 with 30% Higher Power Handling Capability These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM Drain 3 340M 12 Gate Source M = Date Code ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: May, 2021 Rev. 7 FDN340P/DFDN340P ABSOLUTE MAXIMUM RATINGS T = 25C unless otherwise noted A Symbol Parameter Ratings Unit DrainSource Voltage V 20 V DSS V GateSource Voltage 8 V GSS I Drain Current A D Continuous (Note 1a) 2 Pulsed 10 Power Dissipation for Single Operation W P D (Note 1a) 0.5 (Note 1b) 0.46 Operating and Storage Junction Temperature Range C T , T 55 to +150 J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit Thermal Resistance, JunctiontoAmbient (Note 1a) 250 C/W R JA Thermal Resistance, JunctiontoCase (Note 1) C/W R 75 JC ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted A Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV DrainSource Breakdown Voltage V = 0 V, I = 250 A 20 V DSS GS D Breakdown Voltage Temperature Coefficient 12 I = 250 A, Referenced to 25 C mV/ C D BV DSS T J I Zero Gate Voltage Drain Current V = 16 V, V = 0 V 1 A DSS DS GS V = 16 V, V = 0 V, T = 55 C 10 DS GS J I GateBody Leakage, Forward V = 8 V, V = 0 V 100 nA GSSF GS DS I GateBody Leakage, Reverse V = 8 V, V = 0 V 100 nA GSSR GS DS ON CHARACTERISTICS (Note 2) V Gate Threshold Voltage V = V I = 250 A 0.4 0.8 1.5 V GS(th) DS GS, D Gate Threshold Voltage Temperature Coefficient I = 250 A, Referenced to 25 C 3 mV/ C V D GS(th) T J R Static DrainSource OnResistance V = 4.5 V, I = 2 A 60 70 m DS(on) GS D V = 4.5 V, I = 2 A, T = 125 C 77 120 GS D J V = 2.5 V, I = 1.7 A 82 110 GS D I OnState Drain Current V = 4.5 V, V = 5 V 5 A D(on) GS DS g Forward Transconductance V = 4.5 V, I = 2 A 9 S FS DS D DYNAMIC CHARACTERISTICS 600 Input Capacitance V = 10 V, V = 0 V, f = 1.0 MHz 779 pF DS GS 175 Output Capacitance 121 pF 80 Reverse Transfer Capacitance 56 pF www.onsemi.com 2