X-On Electronics has gained recognition as a prominent supplier of FDP047AN08A0 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDP047AN08A0 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDP047AN08A0 ON Semiconductor

FDP047AN08A0 electronic component of ON Semiconductor
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Part No.FDP047AN08A0
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 75V N-Ch PowerTrench
Datasheet: FDP047AN08A0 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.158 ea
Line Total: USD 4.16 
Availability - 12
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
12
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 4.158
3 : USD 3.738
6 : USD 2.926
17 : USD 2.772

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
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Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDP047AN08A0 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDP047AN08A0 and other electronic components in the MOSFETs category and beyond.

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MOSFET N-Channel, POWERTRENCH 75 V, 80 A, 4.7 m FDH047AN08A0, FDP047AN08A0 www.onsemi.com Features R = 4.0 m (Typ.), V = 10 V, I = 80 A DS(ON) GS D Q (tot) = 92 nC (Typ.), V = 10 V g GS V R MAX I MAX DSS DS(ON) D Low Miller Charge 75 V 4.7 m 80 A Low Q Body Diode rr UIS Capability (Single Pulse and Repetitive Pulse) D This Device is PbFree and is RoHS Compliant Applications G Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit S Motor Drives and Uninterruptible Power Supplies TO2473 CASE 340CK G D S TO2203 CASE 340AT G D S MARKING DIAGRAM Y&Z&3&K FDX047AN 08A0 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FDX047AN08A0 = Specific Device Code X = H/P ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2003 1 Publication Order Number: December, 2019 Rev. 4 FDH047AN08A0/DFDH047AN08A0, FDP047AN08A0 MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 75 V DSS V Gate to Source Voltage 20 V GS I Drain Current A Continuous (T < 144C, V = 10 V) 80 D C GS Continuous (T = 25C, V = 10 V, 15 C GS R = 62C/W) JA I Drain Current Pulsed Figure 4 A D E Single Pulse Avalanche Energy (Note 1) 475 mJ AS P Power Dissipation 310 W D Derate Above 25C 2.0 W/C T , T Operating and Storage Temperature Range 55 to +175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Starting T = 25C, L = 0.232 mH, I = 64 A. J AS THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. TO220, TO247 0.48 C/W JC R Thermal Resistance, Junction to Ambient, Max. TO220 (Note 2) 62 C/W JA R Thermal Resistance, Junction to Ambient, Max. TO247 (Note 2) 30 C/W JA 2. Pulse Width = 100 s. PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FDH047AN08A0 FDH047AN08A0 TO247 Tube N/A 30 Units FDP047AN08A0 FDP047AN08A0 TO220 Tube N/A 50 Units www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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