DATA SHEET www.onsemi.com MOSFET N-Channel, V R MAX I MAX DSS DS(ON) D POWERTRENCH 150 V 7.5 m 10 V 130 A *Package limitation current is 120 A. 150 V, 130 A, 7.5 m FDP075N15A, FDB075N15A TO220 CASE 221A09 Description This NChannel MOSFET is produced using onsemi advanced POWERTRENCH process that has been tailored to minimize the G D on state resistance while maintaining superior switching S performance. D 2 D PAK3 (TO263, 3LEAD) Features CASE 418AJ R = 6.25 m (Typ.) V = 10 V, I = 100 A DS(on) GS D G S Fast Switching Low Gate Charge R High Performance Trench Technology for Extremely Low DS(on) MARKING DIAGRAM High Power and Current Handling Capability RoHS Compliant Applications Y&Z&3&K Synchronous Rectification for ATX / Server / Telecom PSU FDB Y&Z&3&K 075N15A Battery Protection Circuit FDP 075N15A Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter Y = onsemi logo FDP075N15A = Device Code FDB075N15A &Z = Assembly Plant Code &3 = 3Digit Date Code Format &K = 2Digits Lot Run Traceability Code D G S NChannel ORDERING INFORMATION See detailed ordering and shipping information on page 9 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: September, 2021 Rev. 3 FDP075N15A/DFDP075N15A, FDB075N15A MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) C FDP075N15AF102 FDB075N15A Symbol Parameter Unit V Drain to Source Voltage 150 V DSS V Gate to Source Voltage DC 20 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 130* A D C Continuous (T = 100C) 92 C I Drain Current Pulsed (Note 1) 522 A DM E Single Pulsed Avalanche Energy (Note 2) 588 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns P Power Dissipation (T = 25C) 333 W D C Derate Above 25C 2.22 W/C T , T Operating and Storage Temperature Range 55 to +175 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Package limitation current is 120 A. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. Starting T = 25C, L = 3 mH, I = 19.8 A. J AS 3. I 100 A, di/dt 200 A/ s, V BV , starting T = 25C. SD DD DSS J THERMAL CHARACTERISTICS FDP075N15AF102 Symbol Parameter FDB075N15A Unit R Thermal Resistance, Junction to Case, Max. 0.45 C/W JC R Thermal Resistance, Junction to Ambient (Minimum Pad of 2 oz Copper), Max. 62.5 JA 2 Thermal Resistance, Junction to Ambient, D2PAK (1 in Pad of 2oz Copper), Max. 40 www.onsemi.com 2