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V = 10 V, I = 75 A This N-Channel MOSFET is produced using Fairchild Semicon- DS(on) GS D ductors advanced PowerTrench process that has been tai- Fast Switching Speed lored to minimize the on-state resistance while maintaining superior switching performance. Low Gate Charge High Performance Trench Technology for Extremely Low Applications R DS(on) Synchronous Rectification for ATX / Server / Telecom PSU High Power and Current Handling Capability Battery Protection Circuit RoHS Compliant Motor Drives and Uninterruptible Power Supplies Micor Solar Inverter D G G D S TO-220 S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDP090N10 Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage 20 V GSS o I Drain Current - Continuous (T = 85 C) 75 A D C I Drain Current - Pulsed (Note 1) 300 A DM E Single Pulsed Avalanche Energy (Note 2) 309 mJ AS I Avalanche Current (Note 1) 75 A AR E Repetitive Avalanche Energy (Note 1) 20.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.6 V/ns o (T = 25 C) 208 W C P Power Dissipation D o o - Derate Above 25C1.39W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L Thermal Characteristics Symbol Parameter FDP090N10 Unit R Thermal Resistance, Junction to Case, Max. 0.72 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDP090N10 Rev. C4