X-On Electronics has gained recognition as a prominent supplier of FDN337N MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDN337N MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDN337N ON Semiconductor

FDN337N electronic component of ON Semiconductor
FDN337N ON Semiconductor
FDN337N MOSFETs
FDN337N  Semiconductors

Images are for reference only
See Product Specifications
Part No. FDN337N
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET SSOT-3 N-CH 30V
Datasheet: FDN337N Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0861 ea
Line Total: USD 258.3 
Availability - 320100
Ship by Tue. 28 Jan to Mon. 03 Feb
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
58200
Ship by Tue. 28 Jan to Mon. 03 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.2115
6000 : USD 0.2006
9000 : USD 0.1976
12000 : USD 0.1947
27000 : USD 0.1917
51000 : USD 0.1889
102000 : USD 0.186

320100
Ship by Tue. 28 Jan to Mon. 03 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.0861
9000 : USD 0.0806
12000 : USD 0.08
30000 : USD 0.0784
45000 : USD 0.0767

494
Ship by Tue. 04 Feb to Fri. 07 Feb
MOQ : 5
Multiples : 5
5 : USD 0.2457
50 : USD 0.1906
150 : USD 0.1431
500 : USD 0.106
3000 : USD 0.0958
6000 : USD 0.0898

2045
Ship by Fri. 24 Jan to Tue. 28 Jan
MOQ : 1
Multiples : 1
1 : USD 0.7
10 : USD 0.3948
50 : USD 0.343
100 : USD 0.2772
143 : USD 0.119

3555
Ship by Tue. 28 Jan to Mon. 03 Feb
MOQ : 141
Multiples : 1
141 : USD 0.4596
180 : USD 0.3614
250 : USD 0.3579
500 : USD 0.2869
1000 : USD 0.2471
3000 : USD 0.1968

58200
Ship by Tue. 28 Jan to Mon. 03 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.2491
6000 : USD 0.2447
9000 : USD 0.2328
12000 : USD 0.2293
27000 : USD 0.2259

1222200
Ship by Tue. 28 Jan to Mon. 03 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1949
9000 : USD 0.1258

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Product
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
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Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the FDN337N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDN337N and other electronic components in the MOSFETs category and beyond.

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The FDN337N with MOSFET SSOT-3 N-CH 30V is an N-channel Enhancement Mode Field Effect Transistor manufactured by ON Semiconductor. It features a 30V drain-source voltage, 10A continuous current, and a maximum 800m? drain-source on-resistance. This part is encapsulated in a miniature surface-mount SSOT bipolar package and is suitable for applications where operation at high temperatures, fast switching, low noise, and low power consumption are required.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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