MOSFET - Power, Single N-Channel, Shielded Gate, POWERTRENCH 100 V, 124 A, 4.2 m FDMS86181 www.onsemi.com General Description This N Channel MV MOSFET is produced using ON Semiconductors advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been S D optimized to minimise onstate resistance and yet maintain superior D switching performance with best in class soft body diode. S D Features S Shielded Gate MOSFET Technology G D Max r = 4.2 m at V = 10 V, I = 44 A DS(on) GS D Max r = 12 m at V = 6 V, I = 22 A DS(on) GS D N-Channel MOSFET ADD 50% lower Qrr than other MOSFET suppliers Top Bottom Lowers switching noise/EMI Pin 1 S S MSL1 robust package design S G 100% UIL tested D RoHS Compliant D D D Applications Power 56 (PQFN8) Primary DCDC MOSFET CASE 483AE Synchronous Rectifier in DCDC and ACDC Motor Drive MARKING DIAGRAM Solar S D MAXIMUM RATINGS (T = 25C unless otherwise noted) A Y&Z&3&K S D Symbol Parameter Value Unit FDMS S D 86181 V Drain to Source Voltage 100 V DS G D V Gate to Source Voltage 20 V GS I Drain Current: A D Y = ON Semiconductor Logo Continuous T = 25C (Note 5) 124 C &Z = Assembly Plant Code Continuous T = 100C (Note 5) 78 C &3 = Data Code (Year & Week) Continuous T = 25C (Note 1a) 17 A Pulsed (Note 4) 510 &K = Lot FDMS86181 = Specific Device Code E Single Pulse Avalanche Energy (Note 3) 337 mJ AS P Power Dissipation: W D ORDERING INFORMATION T = 25C 125 C T = 25C (Note 1a) 2.5 See detailed ordering and shipping information on page 2 of A this data sheet. T , T Operating and Storage Junction Tempera- 55 to C J STG ture Range +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: December, 2020 Rev. 3 FDMS86181/DFDMS86181 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Quantity FDMS86181 FDMS86181 Power 56 (PQFN8) 3000/Tape&Reel (Pb-Free / Halogen Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case 1.0 C/W JC R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 100 V DSS D GS BV Breakdown Voltage Temperature I = 250 A, referenced to 25C 60 mV/C DSS D / T Coefficient J I Zero Gate Voltage Drain Current V = 80 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current, Forward V = 20 V, V = 0 V 100 nA GSS GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 2.0 3.1 4.0 V GS(th) GS DS D V Gate to Source Threshold Voltage I = 250 A, referenced to 25C 9 mV/C GS(th) D / T Temperature Coefficient J r Static Drain to Source On Resistance V = 10 V, I = 44 A 3.3 4.2 m DS(on) GS D V = 6 V, I = 22 A 5.3 12 GS D V = 10 V, I = 44 A, T = 125C 5.7 7.8 GS D J g Forward Transconductance V = 10 V, I = 44 A 116 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 50 V, V = 0 V, f = 1 MHz 2945 4125 pF DS GS iss C Output Capacitance 1730 2425 pF oss C Reverse Transfer Capacitance 20 40 pF rss R Gate Resistance f = 1MHz 0.1 1.3 2.6 g SWITCHING CHARACTERISTICS t Turn-On Delay Time V = 50 V, I = 44 A, V = 10 V, 17 31 ns d(on) DD D GS R = 6 GEN t Rise Time 9 18 ns r t Turn-Off Delay Time 25 40 ns d(off) t Fall Time 6 12 ns f Q Total Gate Charge V = 0 V to 10 V, V = 50 V, 42 59 nC g GS DD I = 44 A D V = 0 V to 6 V, V = 50 V, 27 38 nC GS DD I = 44 A D Q Gate to Source Charge V = 50 V, I = 44 A 13 nC gs DD D Q Gate to Drain Miller Charge 9.3 nC gd www.onsemi.com 2