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MOSFET FDMS8888 N-Channel PowerTrench June 2015 FDMS8888 NNNN N-Channel PowerTrench MOSFET 30 V, 21 A, 9.5 m : Features General Description Max r = 9.5 m : at V = 10 V, I = 13.5 A DS(on) GS D FDMS8888 has been designed to minimize losses in power The conversion application. Advancements in both silicon and Max r = 14.5 m : at V = 4.5 V, I = 10.9 A DS(on) GS D package technologies have been combined to offer the lowest Advanced Package and Silicon combination r while maintaining excellent switching performance. DS(on) for low r and high efficiency DS(on) MSL1 robust package design Applications RoHS Compliant Synchronous Buck for Notebook Vcore and Server Notebook Battery Pack Load Switch Bottom Top Pin 1 4 G D 5 S S S D 6 3 S G 2 S D 7 D S D 8 1 D D D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous (Package limited) T = 25 C 21 C -Continuous (Silicon limited) T = 25 C51 C I A D -Continuous T = 25 C (Note 1a) 13.5 A -Pulsed 80 E mJ Single Pulse Avalanche Energy (Note 3) 54 AS Power Dissipation T = 25 C 42 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 J STG C Thermal Characteristics R Thermal Resistance, Junction to Case 3.3 T JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 T JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS8888 Power 56 13 12 mm 3000 units 8888 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMS8888 Rev.1.3