X-On Electronics has gained recognition as a prominent supplier of NVMFS5A160PLZT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVMFS5A160PLZT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVMFS5A160PLZT1G ON Semiconductor

NVMFS5A160PLZT1G electronic component of ON Semiconductor
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Part No.NVMFS5A160PLZT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET -60V7.7MOHMSINGLE
Datasheet: NVMFS5A160PLZT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1500: USD 1.1989 ea
Line Total: USD 1798.35 
Availability - 0
MOQ: 1500  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1500
Multiples : 1500
1500 : USD 1.1989
15000 : USD 1.1499
150000 : USD 1.1269

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 5.297
10 : USD 1.9596
100 : USD 1.6413
250 : USD 1.6413
500 : USD 1.502
1000 : USD 1.3827
1500 : USD 1.333
4500 : USD 1.2733
9000 : USD 1.2335

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the NVMFS5A160PLZT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVMFS5A160PLZT1G and other electronic components in the MOSFETs category and beyond.

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NVMFS5A160PLZ MOSFET Power, Single P-Channel -60 V, -100 A, 7.7 m Features www.onsemi.com Small Footprint (5 x 6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) V R MAX I MAX DSS DS(ON) D NVMFS5A160PLZWF: Wettable Flank Option for Enhanced Optical 60 V 100 A 7.7 m 10 V Inspection 10.5 m 4.5 V AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant D(5) SPECIFICATION MAXIMUM RATINGS (T = 25C unless otherwise J noted) (Notes 1, 2, 3) 1:Source 2:Source Symbol Parameter Value Unit G(4) 3:Source 4:Gate V Drain to Source Voltage 60 V DSS 5:Drain V Gate to Source Voltage 20 V GS S (1,2,3) I Continuous Drain, D P-CHANNEL MOSFET Current R , T = 25C 100 A JC C Steady (Notes 1, 3) State P Power Dissipation D T = 25C 200 W C R (Note 1) JC DFN5 I Continuous Drain: D Current R T = 25C 15 A (SO8FL) JA A (Notes 1, 2, 3) Steady State MARKING DIAGRAM P Power Dissipation D T = 25C 3.8 W A R (Note 1, 2) D JA S D I Pulsed Drain PW 10 s, DP S 400 A XXXXXX Current duty cycle 1% S AYWZZ D T , T Operating Junction and Storage Temperature 55 to G J STG C D +175 XXXXXX = Specific Device Code I Source Current (Body Diode) 100 A S 5A160L(NVMFS5A160PLZ) E Single Pulse Drain to Source Avalanche En- 335 mJ AS 160LWF(NVMFS5A160PLZWF) ergy (L= 1.0 mH, I = 26 A) L(pk) A = Assembly Location T Lead Temperature for Soldering Purposes 260 L Y = Year C (1/8 from case for 10 s) W = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the ZZ = Lot Traceability device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Junction to Case Steady State 0.75 JC C/W R Junction to Ambient Steady State (Note 3) 39 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surface mounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: July, 2019 Rev. 0 NVMFS5A160PLZ/DNVMFS5A160PLZ ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS V Drain to Source Breakdown Volt- I = 1 mA, V = 0 V 60 (BR)DSS D GS V age I Zero Gate Voltage Drain Current V = 60 V, V = 0 V T = 25C 1.0 A DSS DS GS J T = 100C 100 A J (Note 4) I Gate to Source Leakage Current V = 16 V, V = 0 V 10 A GSS GS DS ON CHARACTERISTICS (Note 5) V Gate Threshold Voltage V = 10 V, I = 1mA 1.2 2.6 V GS(th) DS D R Drain to Source On Resistance V = 10 V I = 50 A 5.8 7.7 DS(on) GS D m V = 4.5 V I = 50 A 7.3 10.5 GS D g Forward Transconductance V = 10 V, I = 50 A 119 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE C Input Capacitance V = 0 V, f = 1 MHz 7700 GS iss V = 20 V, DS C Output Capacitance 720 pF oss C Reverse Transfer Capacitance 540 rss Q Total Gate Charge V = 10 V, I = 50 A 160 g(tot) GS D V = 36 V, DS Q Gate to Source Charge 24 nC gs Q Gate to Drain Charge 45 gd SWITCHING CHARACTERISTICS (Note 6) t Turn-On Delay Time V = 36 V, I = 50 A, 50 d(on) DS D V = 10 V, GS t Rise Time 690 r R = 50 G ns t Turn-Off Delay Time 645 d(off) t Fall Time 643 f DRAIN-SOURCE DIODE CHARACTERISTICS V Forward Diode Voltage V = 0 V, I = 50 A 0.83 1.5 V SD GS S V = 0 V, I = 50 A t Reverse Recovery Time 93 ns rr GS S di/dt = 100 A/ s Q Reverse Recovery Charge 218 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 100 C. Product is not tested to this condition in production. J 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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