NVMFS5A160PLZ MOSFET Power, Single P-Channel -60 V, -100 A, 7.7 m Features www.onsemi.com Small Footprint (5 x 6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) V R MAX I MAX DSS DS(ON) D NVMFS5A160PLZWF: Wettable Flank Option for Enhanced Optical 60 V 100 A 7.7 m 10 V Inspection 10.5 m 4.5 V AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant D(5) SPECIFICATION MAXIMUM RATINGS (T = 25C unless otherwise J noted) (Notes 1, 2, 3) 1:Source 2:Source Symbol Parameter Value Unit G(4) 3:Source 4:Gate V Drain to Source Voltage 60 V DSS 5:Drain V Gate to Source Voltage 20 V GS S (1,2,3) I Continuous Drain, D P-CHANNEL MOSFET Current R , T = 25C 100 A JC C Steady (Notes 1, 3) State P Power Dissipation D T = 25C 200 W C R (Note 1) JC DFN5 I Continuous Drain: D Current R T = 25C 15 A (SO8FL) JA A (Notes 1, 2, 3) Steady State MARKING DIAGRAM P Power Dissipation D T = 25C 3.8 W A R (Note 1, 2) D JA S D I Pulsed Drain PW 10 s, DP S 400 A XXXXXX Current duty cycle 1% S AYWZZ D T , T Operating Junction and Storage Temperature 55 to G J STG C D +175 XXXXXX = Specific Device Code I Source Current (Body Diode) 100 A S 5A160L(NVMFS5A160PLZ) E Single Pulse Drain to Source Avalanche En- 335 mJ AS 160LWF(NVMFS5A160PLZWF) ergy (L= 1.0 mH, I = 26 A) L(pk) A = Assembly Location T Lead Temperature for Soldering Purposes 260 L Y = Year C (1/8 from case for 10 s) W = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the ZZ = Lot Traceability device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Junction to Case Steady State 0.75 JC C/W R Junction to Ambient Steady State (Note 3) 39 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surface mounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: July, 2019 Rev. 0 NVMFS5A160PLZ/DNVMFS5A160PLZ ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS V Drain to Source Breakdown Volt- I = 1 mA, V = 0 V 60 (BR)DSS D GS V age I Zero Gate Voltage Drain Current V = 60 V, V = 0 V T = 25C 1.0 A DSS DS GS J T = 100C 100 A J (Note 4) I Gate to Source Leakage Current V = 16 V, V = 0 V 10 A GSS GS DS ON CHARACTERISTICS (Note 5) V Gate Threshold Voltage V = 10 V, I = 1mA 1.2 2.6 V GS(th) DS D R Drain to Source On Resistance V = 10 V I = 50 A 5.8 7.7 DS(on) GS D m V = 4.5 V I = 50 A 7.3 10.5 GS D g Forward Transconductance V = 10 V, I = 50 A 119 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE C Input Capacitance V = 0 V, f = 1 MHz 7700 GS iss V = 20 V, DS C Output Capacitance 720 pF oss C Reverse Transfer Capacitance 540 rss Q Total Gate Charge V = 10 V, I = 50 A 160 g(tot) GS D V = 36 V, DS Q Gate to Source Charge 24 nC gs Q Gate to Drain Charge 45 gd SWITCHING CHARACTERISTICS (Note 6) t Turn-On Delay Time V = 36 V, I = 50 A, 50 d(on) DS D V = 10 V, GS t Rise Time 690 r R = 50 G ns t Turn-Off Delay Time 645 d(off) t Fall Time 643 f DRAIN-SOURCE DIODE CHARACTERISTICS V Forward Diode Voltage V = 0 V, I = 50 A 0.83 1.5 V SD GS S V = 0 V, I = 50 A t Reverse Recovery Time 93 ns rr GS S di/dt = 100 A/ s Q Reverse Recovery Charge 218 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 100 C. Product is not tested to this condition in production. J 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2