NVMFS5C410NL MOSFET Power, Single N-Channel 40 V, 0.82 m , 330 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses V R MAX I MAX G (BR)DSS DS(ON) D NVMFS5C410NLWF Wettable Flank Option for Enhanced Optical 0.82 m 10 V 40 V 330 A Inspection 1.2 m 4.5 V AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant D (5,6) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 40 V G (4) DSS GatetoSource Voltage V 20 V GS S (1,2,3) Continuous Drain T = 25C I 330 A C D Current R JC NCHANNEL MOSFET T = 100C 230 (Notes 1, 3) C Steady State Power Dissipation T = 25C P 167 W C D R (Note 1) JC T = 100C 83 C MARKING DIAGRAM Continuous Drain T = 25C I 50 A A D Current R JA D T = 100C 35 (Notes 1, 2, 3) A 1 Steady S D State Power Dissipation T = 25C P 3.8 W A D DFN5 XXXXXX S R (Notes 1 & 2) JA (SO8FL) AYWZZ S T = 100C 1.9 A CASE 488AA G D Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM STYLE 1 D Operating Junction and Storage Temperature T , T 55 to C J stg XXXXXX = 5C410L +175 XXXXXX = (NVMFS5C410NL) or Source Current (Body Diode) I 169 A S XXXXXX = 410LWF XXXXXX = (NVMFS5C410NLWF) Single Pulse DraintoSource Avalanche E 706 mJ AS A = Assembly Location Energy (I = 29 A) L(pk) Y = Year Lead Temperature for Soldering Purposes T 260 C L W = Work Week (1/8 from case for 10 s) ZZ = Lot Traceability Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION THERMAL RESISTANCE MAXIMUM RATINGS See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Parameter Symbol Value Unit C/W JunctiontoCase Steady State R 0.9 JC JunctiontoAmbient Steady State (Note 2) R 39 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2019 Rev. 7 NVMFS5C410NL/DNVMFS5C410NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 21.2 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 40 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.75 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 50 A 0.65 0.82 DS(on) GS D m V = 4.5 V I = 50 A 0.95 1.2 GS D Forward Transconductance g V = 15 V, I = 50 A 190 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 8862 ISS Output Capacitance C 4156 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 116 RSS Total Gate Charge Q V = 4.5 V, V = 20 V I = 50 A 66 G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 20 V I = 50 A 143 G(TOT) GS DS D Threshold Gate Charge Q 6.75 nC G(TH) GatetoSource Charge Q 21.4 GS V = 4.5 V, V = 20 V I = 50 A GS DS D GatetoDrain Charge Q 22 GD Plateau Voltage V 2.7 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 20 d(ON) Rise Time t 130 r V = 4.5 V, V = 20 V, GS DS ns I = 50 A, R = 1.0 D G TurnOff Delay Time t 66 d(OFF) Fall Time t 177 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.73 1.2 SD J V = 0 V, GS V I = 50 A S T = 125C 0.6 J Reverse Recovery Time t 79.5 RR Charge Time t 39 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 50 A S Discharge Time t 40.5 b Reverse Recovery Charge Q 126 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2