NVMFS5C423NL Power MOSFET 40 V, 2.0 m , 150 A, Single NChannel Features Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Q and Capacitance to Minimize Driver Losses G NVMFS5C423NLWF Wettable Flank Option for Enhanced Optical Inspection V R MAX I MAX (BR)DSS DS(ON) D AECQ101 Qualified and PPAP Capable 2.0 m 10 V 40 V 150 A These Devices are PbFree and are RoHS Compliant 3.0 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit D (5,6) DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 150 A C D Current R G (4) JC T = 100C 110 (Notes 1, 3) C Steady State Power Dissipation T = 25C P 83 W C D S (1,2,3) R (Note 1) JC T = 100C 42 C NCHANNEL MOSFET Continuous Drain T = 25C I 31 A A D Current R JA T = 100C 22 (Notes 1, 2, 3) A Steady MARKING State Power Dissipation T = 25C P 3.7 W A D DIAGRAM R (Notes 1 & 2) JA T = 100C 1.8 A D 1 S D Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM DFN5 XXXXXX S Operating Junction and Storage Temperature T , T 55 to C J stg (SO8FL) AYWZZ S + 175 CASE 488AA G D Source Current (Body Diode) I 81 A STYLE 1 S D Single Pulse DraintoSource Avalanche E 280 mJ AS XXXXXX = 5C423L Energy (I = 14 A) L(pk) XXXXXX = (NVMFS5C423NL) or XXXXXX = 423LWF Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) XXXXXX = (NVMFS5C423NLWF) A = Assembly Location Stresses exceeding those listed in the Maximum Ratings table may damage the Y = Year device. If any of these limits are exceeded, device functionality should not be W = Work Week assumed, damage may occur and reliability may be affected. ZZ = Lot Traceability THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit ORDERING INFORMATION JunctiontoCase Steady State R 1.8 C/W JC See detailed ordering, marking and shipping information on JunctiontoAmbient Steady State (Note 2) 41 R JA page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: March, 2018 Rev. 6 NVMFS5C423NL/DNVMFS5C423NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 17 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 40 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 90 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.3 mV/C GS(TH) J DraintoSource On Resistance R V = 4.5 V I = 50 A 2.4 3.0 DS(on) GS D m V = 10 V I = 50 A 1.6 2.0 GS D Forward Transconductance g V =15 V, I = 50 A 140 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 3100 ISS Output Capacitance C 1300 V = 0 V, f = 1 MHz, V = 20 V pF OSS GS DS Reverse Transfer Capacitance C 60 RSS Total Gate Charge Q V = 4.5 V, V = 20 V I = 50 A 23 nC G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 20 V I = 50 A 50 G(TOT) GS DS D Threshold Gate Charge Q 5.0 G(TH) nC GatetoSource Charge Q 9.8 GS V = 4.5 V, V = 20 V I = 50 A GS DS D GatetoDrain Charge Q 6.7 GD Plateau Voltage V 3.1 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 12 d(ON) Rise Time t 7.4 r V = 4.5 V, V = 20 V, GS DS ns I = 50 A, R = 1.0 D G TurnOff Delay Time t 28 d(OFF) Fall Time t 8.1 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.85 1.2 SD J V = 0 V, GS V I = 50 A S T = 125C 0.73 J Reverse Recovery Time t 41 RR Charge Time t 23 ns a V = 0 V, dI /dt = 100 A/ s, GS S I = 50 A S Discharge Time t 23 b Reverse Recovery Charge Q 29 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2