NVMFS5C442N Power MOSFET 40 V, 2.3 m , 140 A, Single NChannel Features Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Q and Capacitance to Minimize Driver Losses G NVMFS5C442NWF Wettable Flank Option for Enhanced Optical Inspection V R MAX I MAX (BR)DSS DS(ON) D AECQ101 Qualified and PPAP Capable 40 V 2.3 m 10 V 140 A These Devices are PbFree and are RoHS Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) J D (5,6) Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 140 A C D G (4) Current R JC T = 100C 99 (Notes 1, 3) C Steady State S (1,2,3) Power Dissipation T = 25C P 83 W C D R (Note 1) JC NCHANNEL MOSFET T = 100C 42 C Continuous Drain T = 25C I 29 A A D Current R JA T = 100C 21 MARKING (Notes 1, 2, 3) A Steady State DIAGRAM Power Dissipation T = 25C P 3.7 W A D D R (Notes 1 & 2) JA T = 100C 1.8 1 A S D Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM DFN5 XXXXXX S (SO8FL) AYWZZ S Operating Junction and Storage Temperature T , T 55 to C J stg CASE 488AA G D + 175 STYLE 1 D Source Current (Body Diode) I 92 A S XXXXXX = 5C442N Single Pulse DraintoSource Avalanche E 220 mJ AS XXXXXX = (NVMFS5C442N) or Energy (I = 12 A) L(pk) XXXXXX = 442NWF Lead Temperature for Soldering Purposes T 260 C L XXXXXX = (NVMFS5C442NWF) (1/8 from case for 10 s) A = Assembly Location Y = Year Stresses exceeding those listed in the Maximum Ratings table may damage the W = Work Week device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ZZ = Lot Traceability THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit ORDERING INFORMATION See detailed ordering, marking and shipping information on JunctiontoCase Steady State R 1.8 C/W JC page 5 of this data sheet. JunctiontoAmbient Steady State (Note 2) 41 R JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: March, 2018 Rev. 5 NVMFS5C442N/DNVMFS5C442N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 15.2 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 40 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 90 A 2.0 4.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 7.7 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 50 A 1.9 2.3 m DS(on) GS D Forward Transconductance g V = 15 V, I = 50 A 92 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 2100 ISS Output Capacitance C 1100 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 40 RSS Total Gate Charge Q V = 10 V, V = 20 V I = 50 A 32 G(TOT) GS DS D Threshold Gate Charge Q 6.6 G(TH) nC GatetoSource Charge Q 11 GS V = 10 V, V = 20 V I = 50 A GS DS D GatetoDrain Charge Q 4.7 GD Plateau Voltage V 4.7 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 11 d(ON) Rise Time t 50 r V = 10 V, V = 20 V, GS DS ns I = 50 A, R = 2.5 D G TurnOff Delay Time t 23 d(OFF) Fall Time t 18 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.83 1.2 SD J V = 0 V, GS V I = 50 A S T = 125C 0.71 J Reverse Recovery Time t 43 RR Charge Time t 22 a ns V = 0 V, dI /dt = 100 A/ s, GS S I = 50 A S Discharge Time t 22 b Reverse Recovery Charge Q 40 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2