New Product SiR864DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition g 0.0036 at V = 10 V 40 GS TrenchFET Power MOSFET 30 20 nC g 0.0045 at V = 4.5 V 40 100 % R Tested GS g 100 % UIS Tested PowerPAK SO-8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS S D 6.15 mm 5.15 mm Synchronous Buck Converter 1 S - Low Side Switch: Low Ring Voltage 2 S 3 Notebook PC G 4 Graphic Cards D Server 8 G D 7 D 6 D 5 Bottom View S N-Channel MOSFET Ordering Information: SiR864DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V 30 Drain-Source Voltage DS V Gate-Source Voltage V 20 GS g T = 25 C 40 C g T = 70 C 40 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 28 A b, c T = 70 C 22.5 A A Pulsed Drain Current (300 s) I 70 DM g T = 25 C 40 C Continuous Source-Drain Diode Current I S b, c T = 25 C 4.5 A Single Pulse Avalanche Current I 30 AS L = 0.1 mH Single Pulse Avalanche Energy E 45 mJ AS T = 25 C 54 C T = 70 C 34.7 C Maximum Power Dissipation P W D b, c T = 25 C 5.0 A b, c T = 70 C 3.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f Maximum Junction-to-Ambient t 10 s R 20 25 thJA C/W R Maximum Junction-to-Case (Drain) Steady State 1.8 2.3 thJC Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 C/W. g. Package limited. Document Number: 66820 www.vishay.com S10-2007-Rev. A, 06-Sep-10 1New Product SiR864DP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V Temperature Coefficient V /T 31 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.6 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 1.2 2.4 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 30 A D(on) DS GS V = 10 V, I = 15 A 0.0030 0.0036 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 10 A 0.0036 0.0045 GS D a Forward Transconductance g V = 15 V, I = 15 A 75 S fs DS D b Dynamic Input Capacitance C 2460 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 550 pF oss DS GS Reverse Transfer Capacitance C 200 rss V = 15 V, V = 10 V, I = 10 A 43 65 DS GS D Total Gate Charge Q g 20 30 nC Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 10 A 5.9 gs DS GS D Gate-Drain Charge Q 5.8 gd Gate Resistance R f = 1 MHz 0.3 1.1 2.2 g Turn-On Delay Time t 11 22 d(on) Rise Time t 10 20 r V = 15 V, R = 1.5 DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t 27D GEN g 50 d(off) Fall Time t 918 f ns Turn-On Delay Time t 20 40 d(on) Rise Time t 12 24 r V = 15 V, R = 1.5 DD L I 10 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 25D GEN g 50 d(off) Fall Time t 816 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 40 S C A a Pulse Diode Forward Current I 70 SM Body Diode Voltage V I = 5 A 0.71 1.1 V SD S Body Diode Reverse Recovery Time t 25 50 ns rr Body Diode Reverse Recovery Charge Q 14 28 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 13 a ns Reverse Recovery Rise Time t 12 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 66820 2 S10-2007-Rev. A, 06-Sep-10