New Product SiS406DN Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free V (V) R ()I (A) DS DS(on) D TrenchFET Power MOSFET 0.011 at V = 10 V 14 GS 30 PWM Optimized RoHS 0.0145 at V = 4.5 V 12.2 GS COMPLIANT New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 100 % R Tested g 100 % UIS Tested APPLICATIONS PowerPAK 1212-8 Adaptor Switch Load Switch S 3.30 mm 3.30 mm D 1 S 2 S 3 G 4 D 8 D G 7 D 6 D 5 Bottom View S Ordering Information: SiS406DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 30 DS V Gate-Source Voltage V 25 GS T = 25 C 14 9 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 12.2 7.3 A I Pulsed Drain Current 50 A DM a I 3.3 1.4 Continuous Source Current (Diode Conduction) S I Single Pulse Avalanche Current 20 AS L = 0.1 mH E Avalanche Energy 20 mJ AS T = 25 C 3.7 1.5 A a P W Maximum Power Dissipation D T = 70 C 2.3 1.0 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 28 34 a R Maximum Junction-to-Ambient thJA Steady State 66 81 C/W R Maximum Junction-to-Case (Drain) Steady State 2.0 2.4 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (New Product SiS406DN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 32 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6.6 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.0 3.0 V GS(th) DS GS D I V = 0 V, V = 25 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 12 A 0.0088 0.011 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.0115 0.0145 GS D a g V = 15 V, I = 12 A 32 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1100 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 215 pF oss DS GS C Reverse Transfer Capacitance 95 rss V = 15 V, V = 10 V, I = 16 A 18.2 28 DS GS D Q Total Gate Charge g 8.4 13 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 16 A 2.9 gs DS GS D Q Gate-Drain Charge 2.4 gd R Gate Resistance f = 1 MHz 0.45 2.2 4.4 g t Turn-On Delay Time 10 20 d(on) t Rise Time V = 15 V, R = 15 10 20 r DD L I 1 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 22 35 d(off) Fall Time t 816 f ns t Turn-On Delay Time 20 35 d(on) Rise Time t 12 24 V = 15 V, R = 15 r DD L I 1 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 25 40 d(off) Fall Time t 12 24 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 16 S C A a I 50 Pulse Diode Forward Current SM Body Diode Voltage V I = 2.3 A 0.75 1.1 V SD S t Body Diode Reverse Recovery Time 20 40 ns rr Body Diode Reverse Recovery Charge Q 12 25 nC rr I = 3.2 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 11 a ns Reverse Recovery Rise Time t 9 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68805 2 S-82301-Rev. A, 22-Sep-08