New Product SiS424DN Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a, g V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 0.0064 at V = 10 V 100 % R Tested 35 GS g 20 9.5 nC 100 % UIS Tested 0.0089 at V = 4.5 V 35 GS APPLICATIONS DC/DC Converter PowerPAK 1212-8 POL Notebook, System Power S 3.30 mm 3.30 mm D 1 S 2 S 3 G 4 D 8 D G 7 D 6 D 5 Bottom View S Ordering Information: SiS424DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 20 GS g T = 25 C 35 C g T = 70 C 35 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 19.6 A A b, c T = 70 C 15.7 A Pulsed Drain Current I 60 DM Avalanche Current I 30 AS L = 0.1 mH Avalanche Energy E mJ 45 AS T = 25 C 32 C Continuous Source-Drain Diode Current I A S b, c T = 25 C 3.2 A T = 25 C 39 C T = 70 C 25 C Maximum Power Dissipation P W D b, c T = 25 C 3.7 A b, c T = 70 C 2.4 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 10 s 26 34 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) R Steady State 2.4 3.2 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (SiS424DN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 V DS GS D V /T V Temperature Coefficient 18 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 5 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 1.0 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 55 C 5 DS GS J a On-State Drain Current I V 5 V, V = 10 V 20 A D(on) DS GS V = 10 V, I = 19.6 A 0.0053 0.0064 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 16.6 A 0.0071 0.0089 GS D a g V = 15 V, I = 19.6 A Forward Transconductance 39 S fs DS D b Dynamic Input Capacitance C 1200 iss C V = 10 V, V = 0 V, f = 1 MHz Output Capacitance 410 pF oss DS GS Reverse Transfer Capacitance C 150 rss V = 10 V, V = 10 V, I = 19.6 A 20 30 DS GS D Q Total Gate Charge g 9.5 14.3 nC Gate-Source Charge Q 3.6 V = 10 V, V = 4.5 V, I = 19.6 A gs DS GS D Q Gate-Drain Charge 2.4 gd Gate Resistance R f = 1 MHz 0.3 1.4 2.8 g t Turn-On Delay Time 15 23 d(on) t Rise Time V = 10 V, R = 1 13 20 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 20 30 d(off) t Fall Time 10 20 f ns t Turn-On Delay Time 10 20 d(on) t Rise Time V = 10 V, R = 1 816 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 19 29 d(off) t Fall Time 714 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 32 S C A I Pulse Diode Forward Current 60 SM Body Diode Voltage V I = 10 A, V = 0 V 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 25 38 ns rr Body Diode Reverse Recovery Charge Q 12 24 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 13 a ns Reverse Recovery Rise Time t 12 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69013 2 S-82663-Rev. A, 03-Nov-08