New Product SiR802DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.005 at V = 10 V 30 GS TrenchFET Gen III Power MOSFET 0.0057 at V = 4.5 V 20 30 15.5 nC GS 100 % R Tested g 0.0076 at V = 2.5 V 30 100 % UIS Tested GS Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS DC/DC S 6.15 mm 5.15 mm Low Voltage Drive 1 D S 2 POL S 3 G 4 D 8 D G 7 D 6 D 5 Bottom View S N-Channel MOSFET Ordering Information: SiR802DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 20 DS V V Gate-Source Voltage 12 GS a T = 25 C C 30 a T = 70 C 30 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 22.6 b, c T = 70 C A 18.2 A I Pulsed Drain Current 70 DM a T = 25 C C 25 I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.1 I Single Pulse Avalanche Current 20 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 20 AS T = 25 C 27.7 C T = 70 C 17.7 C Maximum Power Dissipation P W D b, c T = 25 C A 4.6 b, c T = 70 C A 3.0 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 22 27 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 3.5 4.5 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 70 C/W. Document Number: 65671 www.vishay.com S10-0217-Rev. A, 25-Jan-10 1New Product SiR802DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 V DS GS D V Temperature Coefficient V /T 19 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 4.0 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.6 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 20 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 10 A 0.0041 0.005 GS D a R V = 4.5 V, I = 8 A 0.0046 0.0057 Drain-Source On-State Resistance DS(on) GS D V = 2.5 V, I = 6 A 0.0063 0.0076 GS D a g V = 10 V, I = 10 A 70 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 1785 iss C V = 10 V, V = 0 V, f = 1 MHz Output Capacitance 460 pF oss DS GS C Reverse Transfer Capacitance 210 rss V = 10 V, V = 10 V, I = 10 A 32 DS GS D Q Total Gate Charge g 15.5 23.5 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 10 A 3 gs DS GS D Q Gate-Drain Charge 3.6 gd R Gate Resistance f = 1 MHz 0.2 0.75 1.5 g t Turn-On Delay Time 11 22 d(on) t Rise Time V = 10 V, R = 10 11 22 r DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t 30 55 D GEN g d(off) t Fall Time 918 f ns Turn-On Delay Time t 19 35 d(on) t Rise Time V = 10 V, R = 10 14 28 r DD L I 10 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 36 65 D GEN g d(off) t Fall Time 13 26 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 25 S C A a I 70 Pulse Diode Forward Current SM V I = 5 A Body Diode Voltage 0.71 1.1 V SD S Body Diode Reverse Recovery Time t 21 40 ns rr Q Body Diode Reverse Recovery Charge 10.5 20 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 11 a ns t Reverse Recovery Rise Time 10 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65671 2 S10-0217-Rev. A, 25-Jan-10