X-On Electronics has gained recognition as a prominent supplier of SIR668DP-T1-RE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIR668DP-T1-RE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIR668DP-T1-RE3 Vishay

SIR668DP-T1-RE3 electronic component of Vishay
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Part No.SIR668DP-T1-RE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 100V Vds 20V Vgs PowerPAK SO-8
Datasheet: SIR668DP-T1-RE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 1.2207 ea
Line Total: USD 3662.1 
Availability - 5820
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
5820
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.2207

1
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 1.2828

4
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1.8796
10 : USD 1.8299
30 : USD 1.7975
100 : USD 1.7651

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SIR668DP-T1-RE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIR668DP-T1-RE3 and other electronic components in the MOSFETs category and beyond.

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6.15 mm SiR668DP www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET Gen IV power MOSFET D 8 D 7 Very low R - Q figure-of-merit (FOM) DS g D 6 5 Tuned for the lowest R - Q FOM DS oss 100 % R and UIS tested g Material categorization: for definitions of 1 compliance please see www.vishay.com/doc 99912 2 S 3 S 4 S 1 APPLICATIONS D G Top View Bottom View Synchronous rectification PRODUCT SUMMARY Primary side switch V (V) 100 DS DC/DC converters G R max. ( ) at V = 10 V 0.00480 DS(on) GS OR-ing R max. ( ) at V = 7.5 V 0.00505 DS(on) GS Power supplies Q typ. (nC) 55 g S Motor drive control I (A) 95 D N-Channel MOSFET Configuration Single Battery and load switch ORDERING INFORMATION Package PowerPAK SO-8 Lead (Pb)-free and halogen-free SiR668DP-T1-RE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 100 DS V Gate-source voltage V 20 GS T = 25 C 95 C T = 70 C 76 C Continuous drain current (T = 150 C) I J D b, c T = 25 C 23.2 A b, c T = 70 C 18.6 A A Pulsed drain current (t = 100 s) I 200 DM T = 25 C 94 C Continuous source-drain diode current I S b, c T = 25 C 5.6 A Single pulse avalanche current I 35 AS L = 0.1 mH Single pulse avalanche energy E 61.2 mJ AS T = 25 C 104 C T = 70 C 66.6 C Maximum power dissipation P W D b, c T = 25 C 6.25 A b, c T = 70 C 4 A Operating junction and storage temperature range T , T -55 to +150 J stg C c Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT b Maximum junction-to-ambient t 10 s R 15 20 thJA C/W Maximum junction-to-case (drain) Steady state R 0.9 1.2 thJC Notes a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 54 C/W. g. T = 25 C. C S16-2422-Rev. A, 28-Nov-16 Document Number: 75351 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 5.15 mmSiR668DP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 100 - - V DS GS D V temperature coefficient V /T I = 10 mA - 70 - DS DS J D mV/C V temperature coefficient V /T I = 250 A - -7.2 - GS(th) GS(th) J D Gate-source threshold voltage V V = V , I = 250 A 2 - 3.4 V GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 100 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 100 V, V = 0 V, T = 70 C - - 15 DS GS J a On-state drain current I V 10 V, V =10 V 40 - - A D(on) DS GS V =10 V, I = 20 A - 0.00400 0.00480 GS D a Drain-source on-state resistance R DS(on) V = 7.5 V, I = 15 A - 0.00420 0.00505 GS D a Forward transconductance g V = 15 V, I = 20 A - 85 - S fs DS D b Dynamic Input capacitance C - 5400 - iss Output capacitance C V = 50 V, V = 0 V, f = 1 MHz - 280 - pF oss DS GS Reverse transfer capacitance C -38 - rss V = 50 V, V = 10 V, I = 10 A - 72 108 DS GS D Total gate charge Q g -55 83 Gate-source charge Q V = 50 V, V = 7.5 V, I = 10 A - 21.6 - nC gs DS GS D Gate-drain charge Q -12 - gd Output charge Q V = 50 V, V = 0 V - 61 - oss DS GS Gate resistance R f = 1 MHz 0.3 0.9 1.6 g Turn-on delay time t -17 34 d(on) Rise time t -22 44 r V = 50 V, R = 5 , I 10 A, DD L D V = 10 V, R = 1 Turn-off delay time t GEN g -30 60 d(off) Fall time t -11 22 f ns Turn-on delay time t -22 44 d(on) Rise time t -25 50 r V = 50 V, R = 5 , I 10 A, DD L D V = 7.5 V, R = 1 Turn-off delay time t GEN g -38 76 d(off) Fall time t -28 56 f Drain-Source Body Diode Characteristics Continuous source-drain diode current I T = 25 C - - 94 S C A Pulse diode forward current I - - 200 SM Body diode voltage V I = 5 A, V = 0 V - 0.73 1.1 V SD S GS Body diode reverse recovery time t - 59 118 ns rr Body diode reverse recovery charge Q - 115 230 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse recovery fall time t -37 - a ns Reverse recovery rise time t -22 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-2422-Rev. A, 28-Nov-16 Document Number: 75351 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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