StrongIRFET IRF40H210 HEXFET Power MOSFET Application Brushed Motor drive applications V 40V DSS BLDC Motor drive applications R typ. 1.4m DS(on) Battery powered circuits max 1.7m Half-bridge and full-bridge topologies Synchronous rectifier applications I 201A D (Silicon Limited) Resonant mode power supplies I 100A D (Package Limited) OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant PQFN 5 x 6 mm Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRF40H210 PQFN 5mm x 6mm Tape and Reel 4000 IRF40H210 225 6 I = 100A D 200 5 Limited by package 175 150 4 125 3 100 T = 125C J 75 2 50 1 T = 25C 25 J 0 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback April 1, 2015 R , Drain-to -Source On Resistance (m) DS(on) I , Drain Current (A) D IRF40H210 Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 201 D C(Bottom) GS T = 100C Continuous Drain Current, V 10V 127 I D C(Bottom) GS A I T = 25C Continuous Drain Current, V 10V(Wire Bond Limited) 100 D C(Bottom) GS I Pulsed Drain Current 400* DM P T = 25C Maximum Power Dissipation 125 W D C Linear Derating Factor 1.0 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 150 C T Storage Temperature Range STG Avalanche Characteristics E Single Pulse Avalanche Energy 149 AS (Thermally limited) mJ E 370 Single Pulse Avalanche Energy AS (Thermally limited) I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case R (Bottom) 1.0 JC Junction-to-Case C/W R (Top) 18 JC Junction-to-Ambient R 33 JA Junction-to-Ambient R (<10s) 20 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 42 mV/C Reference to 25C, I = 1mA V /T D (BR)DSS J R Static Drain-to-Source On-Resistance 1.4 1.7 V = 10V, I = 100A DS(on) GS D m 2.3 V = 6.0V, I = 50A GS D V Gate Threshold Voltage 2.2 3.7 V V = V , I = 150A GS(th) DS GS D I Drain-to-Source Leakage Current 1.0 V = 40 V, V = 0V DSS DS GS A 150 V = 40V,V = 0V,T =125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.6 G Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 100A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 0.030mH, R = 50 , I = 100A, V =10V. Jmax J G AS GS I 100A, di/dt 1117A/s, V V , T 150C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: