X-On Electronics has gained recognition as a prominent supplier of QH8KA1TCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. QH8KA1TCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

QH8KA1TCR ROHM

QH8KA1TCR electronic component of ROHM
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See Product Specifications
Part No.QH8KA1TCR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 30V Nch+Nch Si MOSFET
Datasheet: QH8KA1TCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7623 ea
Line Total: USD 0.76 
Availability - 2651
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2651
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7623
10 : USD 0.5533
100 : USD 0.3751
500 : USD 0.3036
1000 : USD 0.275
3000 : USD 0.2288
6000 : USD 0.2288
9000 : USD 0.22

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QH8KA1TCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QH8KA1TCR and other electronic components in the MOSFETs category and beyond.

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QH8KA1 Datasheet 30V Nch+Nch Power MOSFET llOutline TSMT8 V 30V DSS R (Max.) 73m DS(on) I 4.5A D P 2.4W D llFeatures llInner circuit 1) Low on - resistance. 2) Small Surface Mount Package (TSMT8). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Motor Drive Taping code TCR Marking KA1 llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS *1 I Continuous drain current 4.5 A D *2 I Pulsed drain current 12 A D, pulse V Gate - Source voltage 20 V GSS *3 E Avalanche energy, single pulse 0.65 mJ AS *3 I Avalanche current 3 A AS *1 P 2.4 D total *4 P Power dissipation 1.5 W D *4 P element 1.25 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/11 2015 ROHM Co., Ltd. All rights reserved. 20150204 - Rev.002 QH8KA1 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 Thermal resistance, junction - ambient R - 83.3 - /W thJA llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 21 - mV/ temperature coefficient T j referenced to 25 Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 100 nA GSS DS GS leakage current Gate threshold V V = V , I = 1mA 1.0 - 2.5 V GS(th) DS GS D voltage V I = 1mA GS(th) D Gate threshold voltage - -3 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 4.5A - 56 73 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 3.0A - 86 112 GS D *5 g V = 5V, I = 3A Transconductance 1.7 - - S fs DS D *1 Pw 1s, Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 0.1mH, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G ch *4 Mounted on a ceramic board (30300.8mm) *5 Pulsed www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150204 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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