IPB110N20N3LF MOSFET TM DPAK OptiMOS 3 Linear FET , 200 V Features Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21 Drain Table 1 Key Performance Parameters Pin 2, Tab Parameter Value Unit V 200 V DS Gate Pin 1 RDS(on),max 11 m Source Pin 3 I 88 A D I pulse (VDS=56 V, tp=10 8.7 A ms) Type / Ordering Code Package Marking Related Links IPB110N20N3LF PG-TO 263-3 110N20LF - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.1, 2017-02-16TM OptiMOS 3 Linear FET , 200 V IPB110N20N3LF Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 11 Trademarks . 11 Disclaimer 11 Final Data Sheet 2 Rev. 2.1, 2017-02-16