QH8M22 Datasheet 40V Nch+Pch Power MOSFET llOutline Symbol Tr1:Nch Tr2:Pch V 40V -40V DSS TSMT8 R (Max.) 46.0m 190m DS(on) I 4.5A 2.0A D P 1.5W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (TSMT8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TCR Marking M22 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Value Parameter Symbol Unit Tr1:Nch Tr2:Pch V Drain - Source voltage 40 -40 V DSS I Continuous drain current 4.5 2.0 A D *1 I Pulsed drain current 18 8.0 A DP V Gate - Source voltage 20 20 V GSS *2 I Avalanche current, single pulse 4.5 -2.0 A AS *2 E Avalanche energy, single pulse 1.6 0.3 mJ AS *3 P 1.5 D Power dissipation total W *4 P 1.1 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/19 20180117 - Rev.004 2017 ROHM Co., Ltd. All rights reserved. QH8M22 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 83.3 thJA Thermal resistance, junction - ambient total /W *4 R - - 113 thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Type Conditions Unit Min. Typ. Max. Tr1 V = 0V, I = 1mA 40 - - GS D Drain - Source breakdown V V (BR)DSS voltage Tr2 V = 0V, I = -1mA -40 - - GS D V I = 1mA, referenced to 25 Tr1 - 26.2 - (BR)DSS D Breakdown voltage mV/ temperature coefficient T I = -1mA, referenced to 25 j Tr2 D - -50 - Tr1 V = 40V, V = 0V - - 1 DS GS Zero gate voltage I A DSS drain current Tr2 V = -40V, V = 0V - - -1 DS GS Tr1 V = 0V, V = 20V - - 100 nA DS GS Gate - Source I GSS leakage current Tr2 V = 0V, V = 20V - - 10 A DS GS Tr1 V = V , I = 10A 1.0 - 2.5 DS GS D Gate threshold V V GS(th) voltage Tr2 V = -10V, I = -1mA -1.0 - -3.0 DS D V I = 1mA, referenced to 25 Tr1 - -4.9 - GS(th) D Gate threshold voltage mV/ temperature coefficient T I = -1mA, referenced to 25 Tr2 - 3.3 - j D V = 10V, I = 4.5A - 34.6 46.0 GS D Tr1 V = 4.5V, I = 4.5A - 43.9 59.0 GS D Static drain - source *5 R m DS(on) on - state resistance V = -10V, I = -2.0A - 130 190 GS D Tr2 V = -4.5V, I = -2.0A - 180 260 GS D Tr1 - 3.5 - Gate resistance R f=1MHz, open drain G Tr2 - 11.2 - Tr1 V = 5V, I = 4.5A 2.6 - - DS D Forward Transfer *5 Y S fs Admittance Tr2 V = -10V, I = -2.0A 1.2 - - DS D *1 Pw 10s, Duty cycle 1% *2 Tr1: L 0.1mH, V = 20V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j Tr2: L 0.1mH, V = -20V, R = 25, Starting T = 25 Fig.6-1,6-2 DD G j *3 Mounted on a ceramic boad (30300.8mm) *4 Mounted on a FR4 (25250.8mm) *5 Pulsed www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2/19 20180117 - Rev.004