New Product SiR416DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a, e V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0038 at V = 10 V 50 GS TrenchFET Power MOSFET 40 28.2 nC 100 % R and UIS Tested 0.0042 at V = 4.5 V 50 GS g Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS D S POL 6.15 mm 5.15 mm 1 S Synchronous Rectification 2 S 3 G 4 D 8 G D 7 D 6 D 5 S Bottom View N-Channel MOSFET Ordering Information: SiR416DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 40 DS V V Gate-Source Voltage 20 GS e T = 25 C C 50 e T = 70 C 50 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 27.5 b, c T = 70 C A 21.9 A Pulsed Drain Current I 70 DM e T = 25 C C 50 I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.7 Single Pulse Avalanche Current I 40 AS L = 0.1 mH E mJ Avalanche Energy 80 AS T = 25 C 69 C T = 70 C 44.4 C P Maximum Power Dissipation W D b, c T = 25 C A 5.2 b, c T = 70 C A 3.3 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C f, g 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d R t 10 s 19 24 thJA Maximum Junction-to-Ambient C/W R Maximum Junction-to-Case (Drain) Steady State 1.2 1.8 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 65 C/W. e. Package limited. f. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. g. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 64985 www.vishay.com S09-1001-Rev. A, 01-Jun-09 1New Product SiR416DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 1 mA Drain-Source Breakdown Voltage 40 V DS GS D V Temperature Coefficient V /T 46 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.9 GS(th) GS(th) J V = V , I = 250 A Gate-Source Threshold Voltage V 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 40 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.0031 0.0038 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.0035 0.0042 GS D a g V = 15 V, I = 15 A 96 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 3350 iss C V = 20 V, V = 0 V, f = 1 MHz Output Capacitance 490 pF oss DS GS Reverse Transfer Capacitance C 197 rss V = 20 V, V = 10 V, I = 10 A 59 90 DS GS D Q Total Gate Charge g 28.2 43 nC Gate-Source Charge Q V = 20 V, V = 4.5 V, I = 10 A 7.7 gs DS GS D Q Gate-Drain Charge 9 gd Gate Resistance R f = 1 MHz 0.2 1.1 2.2 g t Turn-On Delay Time 28 55 d(on) Rise Time t 85 150 r V = 20 V, R = 2 DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 42 80 d(off) t Fall Time 40 80 f ns t Turn-On Delay Time 10 20 d(on) t Rise Time V = 20 V, R = 2 10 20 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 32 60 d(off) t Fall Time 816 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 50 S C A a I 70 Pulse Diode Forward Current SM Body Diode Voltage V I = 3 A 0.7 1.1 V SD S t Body Diode Reverse Recovery Time 31 60 ns rr Q Body Diode Reverse Recovery Charge 26 48 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 16 a ns t Reverse Recovery Rise Time 15 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 64985 2 S09-1001-Rev. A, 01-Jun-09