SiR424DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition a 0.0055 at V = 10 V GS 30 TrenchFET Power MOSFET 20 9.6 nC 100 % R Tested a 0.0074 at V = 4.5 V g GS 30 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS S Buck Converters 6.15 mm 5.15 mm 1 D S POL 2 S 3 DC/DC G 4 D 8 D G 7 D 6 D 5 Bottom View S Ordering Information: SiR424DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 20 GS a T = 25 C 30 C a T = 70 C 30 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 23.4 A A b, c T = 70 C 18.7 A Pulsed Drain Current I 70 DM Avalanche Current I 35 AS L = 0.1 mH Avalanche Energy E mJ 61 AS a T = 25 C 30 C Continuous Source-Drain Diode Current I A S b, c T = 25 C 4 A T = 25 C 41.7 C T = 70 C 26.7 C Maximum Power Dissipation P W D b, c T = 25 C 4.8 A b, c T = 70 C 3.1 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 10 s 21 26 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 2.4 3.0 thJC Notes: a. Based on T = 25 C. Package limited. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 70 C/W. Document Number: 64830 www.vishay.com S09-0854-Rev. A, 18-May-09 1SiR424DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 V DS GS D V /T V Temperature Coefficient 20 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 5.5 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 12.5V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 55 C 5 DS GS J a On-State Drain Current I V 5 V, V = 10 V 50 A D(on) DS GS V = 10 V, I = 20 A 0.0046 0.0055 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 14 A 0.0061 0.0074 GS D a g V = 15 V, I = 20 A Forward Transconductance 80 S fs DS D b Dynamic Input Capacitance C 1250 iss C V = 10 V, V = 0 V, f = 1 MHz Output Capacitance 410 pF oss DS GS Reverse Transfer Capacitance C 175 rss V = 10 V, V = 10 V, I = 24 A 22 35 DS GS D Q Total Gate Charge g 9.6 15 nC Gate-Source Charge Q 3.5 V = 10 V, V = 4.5 V, I = 24 A gs DS GS D Q Gate-Drain Charge 2.9 gd Gate Resistance R f = 1 MHz 0.2 1.0 2.0 g t Turn-On Delay Time 18 30 d(on) t Rise Time V = 10 V, R = 10 12 20 r DD L I 1.0 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 23 40 d(off) t Fall Time 10 15 f ns t Turn-On Delay Time 915 d(on) t Rise Time V = 10 V, R = 10 10 15 r DD L I 1.0 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 23 40 d(off) t Fall Time 715 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 30 S C A I Pulse Diode Forward Current 70 SM Body Diode Voltage V I = 4.0 A, V = 0 V 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 25 50 ns rr Body Diode Reverse Recovery Charge Q 15 30 nC rr I = 4.0 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 13 a ns Reverse Recovery Rise Time t 12 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 64830 2 S09-0854-Rev. A, 18-May-09