New Product Si3473CDV Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.022 at V = - 4.5 V - 8 GS TrenchFET Power MOSFET PWM Optimized - 12 0.028 at V = - 2.5 V - 8 26 nC GS Compliant to RoHS Directive 2002/95/EC 0.036 at V = - 1.8 V - 8 GS APPLICATIONS Load Switch PA Switch TSOP-6 (4) S Top View 1 6 3 mm 5 2 (3) G Marking Code AR XXX 3 4 Lot Traceability and Date Code Part Code 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3473CDV-T1-E3 (Lead (Pb)-free) Si3473CDV-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V - 12 DS V Gate-Source Voltage V 8 GS a T = 25 C C - 8 a T = 70 C C - 8 Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C A - 8 b, c T = 70 C A A - 6.5 Pulsed Drain Current I - 20 DM T = 25 C - 3.5 C I Continuous Source-Drain Diode Current S b, c T = 25 C A - 1.67 T = 25 C 4.2 C T = 70 C 2.7 C P Maximum Power Dissipation W D b, c T = 25 C A 2.0 b, c T = 70 C A 1.3 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 5 s R 55 62.5 Maximum Junction-to-Ambient thJA C/W Steady State R Maximum Junction-to-Foot (Drain) 25 30 thJF Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 C/W. Document Number: 69947 www.vishay.com S09-0660-Rev. C, 20-Apr-09 1New Product Si3473CDV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 12 V DS GS D V Temperature Coefficient V /T - 13 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 1.0 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = - 12 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 12 V, V = 0 V, T = 85 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 8.1 A 0.016 0.022 GS D a R V = - 2.5 V, I = - 7.1 A 0.021 0.028 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 2.8 A 0.026 0.036 GS D a g V = - 6 V, I = - 8.1 A 30 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2010 iss C V = - 6 V, V = 0 V, f = 1 MHz Output Capacitance 580 pF oss DS GS C Reverse Transfer Capacitance 520 rss V = - 6 V, V = - 8 V, I = - 8.1 A 43 65 DS GS D Total Gate Charge Q g 26 40 nC Q Gate-Source Charge V = - 6 V, V = - 4.5 V, I = - 8.1 A 3.3 gs DS GS D Gate-Drain Charge Q 7.5 gd R Gate Resistance f = 1 MHz 4.8 g Turn-On Delay Time t 20 30 d(on) t Rise Time V = - 6 V, R = 0.92 55 85 r DD L I - 6.5 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 60 90 D GEN g d(off) t Fall Time 40 60 f ns Turn-On Delay Time t 10 15 d(on) t Rise Time V = - 6 V, R = 0.92 15 25 r DD L I - 6.5 A, V = - 8 V, R = 1 Turn-Off Delay Time t D GEN g 62 95 d(off) t Fall Time 35 55 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 3.5 S C A a I - 20 Pulse Diode Forward Current SM Body Diode Voltage V I = - 5.9 A - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 50 75 ns rr Q Body Diode Reverse Recovery Charge 30 45 nC rr I = - 6.5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 18 a ns t Reverse Recovery Rise Time 32 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69947 2 S09-0660-Rev. C, 20-Apr-09