Si3586DV Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.060 at V = 4.5 V 3.4 GS TrenchFET Power MOSFET Fast Switching In Small Footprint N-Channel 20 0.070 at V = 2.5 V 3.2 GS Very Low R for Increased Efficiency DS(on) 0.100 at V = 1.8 V 2.5 GS Compliant to RoHS Directive 2002/95/EC 0.110 at V = - 4.5 V - 2.5 GS 0.145 at V = - 2.5 V P-Channel - 20 - 2.0 APPLICATIONS GS Load Switch for Portable Devices 0.220 at V = - 1.8V - 1.0 GS TSOP-6 D S 1 2 T op View G1 D1 1 6 G 2 3 mm S2 S1 5 2 G 1 G2 D2 3 4 2.85 mm S D 1 2 Ordering Information: Si3586DV-T1-E3 (Lead (Pb)-free) Si3586DV-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A N-Channel P-Channel Parameter Symbol Unit 5 s Steady State 5 s Steady State V Drain-Source Voltage 20 - 20 DS V V Gate-Source Voltage 8 GS T = 25 C 3.4 2.9 - 2.5 - 2.1 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 2.7 2.3 - 2.0 - 1.7 A A I Pulsed Drain Current 8 DM a I 1.05 0.75 - 1.05 - 0.75 Continuous Source Current (Diode Conduction) S T = 25 C 1.15 0.83 1.15 0.83 A a P W Maximum Power Dissipation D T = 70 C 0.73 0.53 0.73 0.53 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 93 110 a R Maximum Junction-to-Ambient thJA Steady State 130 150 C/W R Maximum Junction-to-Foot (Drain) Steady State 90 90 thJF Note: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72310 www.vishay.com S09-2110-Rev. D, 12-Oct-09 1Si3586DV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V = V , I = 250 A N-Ch 0.40 1.1 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 0.40 - 1.1 DS GS D V = 0 V, V = 8 V N-Ch 100 DS GS I Gate-Body Leakage nA GSS V = 0 V, V = 8 V P-Ch 100 DS GS V = 20 V, V = 0 V N-Ch 1 DS GS V = - 20 V, V = 0 V P-Ch - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 85 C N-Ch 10 DS GS J V = - 20 V, V = 0 V, T = 85 C P-Ch - 10 DS GS J V 5 V, V = 4.5 V N-Ch 5 DS GS a I A On-State Drain Current D(on) V - 5 V, V = - 4.5 V P-Ch - 5 DS GS V = 4.5 V, I = 3.4 A N-Ch 0.047 0.060 GS D V = - 4.5 V, I = - 2.5 A P-Ch 0.086 0.110 GS D V = 2.5 V, I = 3.2 A N-Ch 0.054 0.070 GS D a R Drain-Source On-State Resistance DS(on) V = - 2.5 V, I = - 2.0 A P-Ch 0.116 0.145 GS D V = - 1.8 V, I = - 2.5 A N-Ch 0.075 0.100 GS D V = - 1.8 V, I = - 1.0 A P-Ch 0.170 0.220 GS D V = 5 V, I = 3.4 A N-Ch 13 DS D a g S Forward Transconductance fs V = - 5 V, I = - 2.5 A P-Ch 6 DS D I = 1.05 A, V = 0 V N-Ch 0.8 1.1 S GS a V V Diode Forward Voltage SD I = - 1.05 A, V = 0 V P-Ch - 0.8 - 1.1 S GS b Dynamic N-Ch 4.1 6.0 Q Total Gate Charge g N-Channel P-Ch 5 7.5 V = 10 V, V = 4.5 V, I = 3.4 A DS GS D N-Ch 0.65 Q Gate-Source Charge nC gs P-Ch 0.68 P-Channel N-Ch 0.8 V = - 10 V, V = - 4.5 V, I = - 2.5 A DS GS D Q Gate-Drain Charge gd P-Ch 1.3 N-Ch 2.6 R Gate Resistance g P-Ch 9.8 N-Ch 30 45 t Turn-On Delay Time d(on) N-Channel P-Ch 28 45 V = 10 V, R = 10 DD L N-Ch 52 85 t Rise Time I 1 A, V = 4.5 V, R = 6 r D GEN G P-Ch 55 85 N-Ch 25 40 P-Channel t Turn-Off Delay Time d(off) ns P-Ch 55 85 V = - 10 V, R = 10 DD L N-Ch 20 30 I - 1 A, V = - 4.5 V, R = 6 D GEN G t Fall Time f P-Ch 32 50 I = 1.05 A, dI/dt = 100 A/s N-Ch 25 40 F Source-Drain Reverse Recovery Time t rr I = - 1.05 A, dI/dt = 100 A/s P-Ch 25 40 F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72310 2 S09-2110-Rev. D, 12-Oct-09