2N6034 2N6035 2N6036 PNP 2N6037 2N6038 2N6039 NPN www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: DARLINGTON POWER The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 TRANSISTORS series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) 2N6034 2N6035 2N6036 C SYMBOL 2N6037 2N6038 2N6039 UNITS Collector-Base Voltage V 40 60 80 V CBO Collector-Emitter Voltage V 40 60 80 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 4.0 A C Peak Collector Current I 8.0 A CM Continuous Base Current I 100 mA B Power Dissipation P 40 W D Power Dissipation (T=25C) P 1.5 W A D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 83.3 C/W JA Thermal Resistance 3.12 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V 500 A CBO CB CBO I V =Rated V , V=1.5V 100 A CEV CE CEO BE I V =Rated V , V =1.5V, T=125C 500 A CEV CE CEO BE C I V =Rated V 100 A CEO CE CEO I V=5.0V 2.0 mA EBO EB BV I =100mA (2N6034, 2N6037) 40 V CEO C BV I =100mA (2N6035, 2N6038) 60 V CEO C BV I =100mA (2N6036, 2N6039) 80 V CEO C V I =2.0A, I=8.0mA 2.0 V CE(SAT) C B V I =4.0A, I=40mA 3.0 V CE(SAT) C B V I =4.0A, I=40mA 4.0 V BE(SAT) C B V V =3.0V, I=2.0A 2.8 V BE(ON) CE C h V =3.0V, I=500mA 500 FE CE C h V =3.0V, I=2.0A 750 15K FE CE C h V =3.0V, I=4.0A 100 FE CE C f V =10V, I =750mA, f=1.0MHz 25 MHz T CE C C V =10V, I =0, f=100kHz (PNP) 200 pF ob CB E C V =10V, I =0, f=100kHz (NPN) 100 pF ob CB E R1 (12-March 2014)2N6034 2N6035 2N6036 PNP 2N6037 2N6038 2N6039 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS TO-126 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R1 (12-March 2014) www.centralsemi.com