2ST2121 STMicroelectronics

2ST2121 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V = -250 V CEO Complementary to 2ST5949 Typical f = 25 MHz t o Fully characterized at 125 C Applications 1 Audio power amplifier 2 TO-3 Description The device is a PNP transistor manufactured Figure 1. Internal schematic diagram using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Table 1. Device summary Order code Marking Package Packaging 2ST2121 2ST2121 TO-3 tray November 2008 Rev 5 1/8 www.st.com 8 Obsolete Product(s) - Obsolete Product(s)Absolute maximun rating 2ST2121 1 Absolute maximun rating Table 2. Absolute maximum rating Symbol Parameter Value Unit V Collector-base voltage (I = 0) -250 V CBO E V Collector-emitter voltage (I = 0) -250 V CEO B V Emitter-base voltage (I = 0) -6 V EBO C I Collector current -17 A C I Collector peak current (t < 5 ms) -34 A CM P P Total dissipation at T = 25 C 250 W TOT c T Storage temperature -65 to 200 C stg T Max. operating junction temperature 200 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 0.7 C/W thj-case 2/8 Obsolete Product(s) - Obsolete Product(s)