2ST31A STMicroelectronics

2ST31A Low voltage NPN power transistor Features High switching speed TAB Good performances in terms of h linearity FE Application Linear and switching industrial applications 3 2 1 Description TO-220 The device is manufactured in planar technology with base island layout. The resulting transistor shows high gain performance coupled with low saturation voltage. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging 2ST31A 2ST31A TO-220 Tube December 2010 Doc ID 17868 Rev 2 1/8 www.st.com 8Absolute maximum ratings 2ST31A 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) 60 V CBO E V Collector-emitter voltage (I = 0) 60 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 3 A C I Collector peak current 5 A CM I Base current 1 A B P Total dissipation at T = 25C 40 W TOT case T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max. 3.1 C/W thJC 2/8 Doc ID 17868 Rev 2