2N6036 STMicroelectronics

2N6036 2N6039 Complementary power Darlington transistors . Features Good h linearity FE High f frequency T Monolithic Darlington configuration with integrated antiparallel collector-emitter diode 1 Applications 2 3 Linear and switching industrial equipment SOT-32 Description The devices are manufactured in planar Figure 1. Internal schematic diagram technology with base island layout and monolithic Darlington configuration. R typ. = 15 k R typ. = 100 1 2 Table 1. Device summary Order codes Marking Polarity Package Packaging 2N6036 2N6036 NPN SOT-32 Tube 2N6039 2N6039 PNP SOT-32 Tube May 2009 Doc ID 5064 Rev 5 1/10 www.st.com 10 Obsolete Product(s) - Obsolete Product(s) Absolute maximum ratings 2N6036, 2N6039 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) CBO E 80 V V Collector-emitter voltage (I = 0) CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 4 A C I Collector peak current 8 A CM I Base current 0.1 A B P Total dissipation at T = 25C 40 W TOT case T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J Note: For PNP types voltage and current values are negative. 2/10 Doc ID 5064 Rev 5 Obsolete Product(s) - Obsolete Product(s)