BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated CollectorEmitter Diode www.onsemi.com and Builtin Efficient Antisaturation Network POWER TRANSISTOR The BUL45D2G is stateofart High Speed High gain BiPolar 5.0 AMPERES, transistor (H2BIP). High dynamic characteristics and lottolot 700 VOLTS, 75 WATTS minimum spread (150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an h FE COLLECTOR window. Its characteristics make it also suitable for PFC application. 2, 4 Features Low Base Drive Requirement 1 High Peak DC Current Gain BASE Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread 3 Integrated CollectorEmitter Free Wheeling Diode EMITTER Fully Characterized and Guaranteed Dynamic V CE(sat) 6 Sigma Process Providing Tight and Reproductible 4 Parameter Spreads These Devices are PbFree and are RoHS Compliant* TO220 MAXIMUM RATINGS CASE 221A STYLE 1 Rating Symbol Value Unit CollectorEmitter Sustaining Voltage V 400 Vdc CEO 1 2 CollectorBase Breakdown Voltage V 700 Vdc CBO 3 CollectorEmitter Breakdown Voltage V 700 Vdc CES MARKING DIAGRAM EmitterBase Voltage V 12 Vdc EBO Collector Current Continuous I 5 Adc C Collector Current Peak (Note 1) I 10 Adc CM Base Current Continuous I 2 Adc B BUL45D2G Base Current Peak (Note 1) I 4 Adc BM AY WW Total Device Dissipation P D T = 25 C 75 W C Derate above 25C 0.6 W/ C Operating and Storage Temperature T , T 65 to +150 C J stg A = Assembly Location Stresses exceeding those listed in the Maximum Ratings table may damage the Y = Year device. If any of these limits are exceeded, device functionality should not be WW = Work Week assumed, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. G = PbFree Package ORDERING INFORMATION Device Package Shipping *For additional information on our PbFree strategy and soldering details, please BUL45D2G TO220 50 Units / Rail download the ON Semiconductor Soldering and Mounting Techniques (PbFree) Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 8 BUL45D2/DBUL45D2G THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, JunctiontoCase R 1.65 C/W JC Thermal Resistance, JunctiontoAmbient R 62.5 C/W JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 5 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 100 mA, L = 25 mH) 400 450 C CollectorBase Breakdown Voltage V Vdc CBO (I = 1 mA) 700 910 CBO EmitterBase Breakdown Voltage V Vdc EBO (I = 1 mA) 12 14.1 EBO Collector Cutoff Current I Adc CEO (V = Rated V , I = 0) 100 CE CEO B Collector Cutoff Current I Adc CES (V = Rated V , V = 0) CE CES EB T = 25C 100 C T = 125C 500 C (V = 500 V, V = 0) CE EB T = 125C 100 C EmitterCutoff Current I Adc EBO (V = 10 Vdc, I = 0) 100 EB C ON CHARACTERISTICS BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 0.8 Adc, I = 80 mAdc) C B T = 25C 0.8 1 C T = 125C 0.7 0.9 C (I = 2 Adc, I = 0.4 Adc) C B T = 25C 0.89 1 C T = 125C 0.79 0.9 C CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 0.8 Adc, I = 80 mAdc) C B T = 25C 0.28 0.4 C T = 125C 0.32 0.5 C (I = 2 Adc, I = 0.4 Adc) C B T = 25C 0.32 0.5 C T = 125C 0.38 0.6 C (I = 0.8 Adc, I = 40 mAdc) C B T = 25C 0.46 0.75 C T = 125C 0.62 1 C DC Current Gain h FE (I = 0.8 Adc, V = 1 Vdc) C CE T = 25C 22 34 C T = 125C 20 29 C (I = 2 Adc, V = 1 Vdc) C CE T = 25C 10 14 C T = 125C 7 9.5 C DIODE CHARACTERISTICS Forward Diode Voltage V V EC (I = 1 Adc) EC T = 25C 1.04 1.5 C T = 125C 0.7 C (I = 2 Adc) EC T = 25C 1.2 1.6 C T = 125C C (I = 0.4 Adc) EC T = 25C 0.85 1.2 C T = 125C 0.62 C www.onsemi.com 2