BUH150G SWITCHMODE NPN Silicon Planar Power Transistor The BUH150G has an application specific stateofart die designed for use in 150 W Halogen electronic transformers. This power transistor is specifically designed to sustain the large BUH150G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V 400 460 Vdc CEO(sus) (I = 100 mA, L = 25 mH) C CollectorBase Breakdown Voltage V 700 860 Vdc CBO (I = 1 mA) CBO EmitterBase Breakdown Voltage V 10 12.3 Vdc EBO (I = 1 mA) EBO Collector Cutoff Current I 100 Adc CEO (V = Rated V , I = 0) CE CEO B Collector Cutoff Current T = 25C I 100 Adc C CES (V = Rated V , V = 0) T = 125C 1000 CE CES EB C Collector Base Current T = 25C I 100 Adc C CBO (V = Rated V , V = 0) T = 125C 1000 CB CBO EB C EmitterCutoff Current I 100 Adc EBO (V = 9 Vdc, I = 0) EB C ON CHARACTERISTICS BaseEmitter Saturation Voltage V 1 1.25 Vdc BE(sat) (I = 10 Adc, I = 2 Adc) C B CollectorEmitter Saturation Voltage T = 25C V 0.16 0.4 Vdc C CE(sat) (I = 2 Adc, I = 0.4 Adc) T = 125C 0.15 0.4 C B C (I = 10 Adc, I = 2 Adc) T = 25C 0.45 1 Vdc C B C (I = 20 Adc, I = 4 Adc) T = 25C 2 5 Vdc C B C DC Current Gain (I = 20 Adc, V = 5 Vdc) T = 25C h 4 7 C CE C FE T = 125C 2.5 4.5 C (I = 10 Adc, V = 5 Vdc) T = 25C 8 12 C CE C T = 125C 6 10 C (I = 2 Adc, V = 1 Vdc) T = 25C 12 20 C CE C T = 125C 14 22 C (I = 100 mAdc, V = 5 Vdc) T = 25C 10 20 C CE C DYNAMIC SATURATION VOLTAGE V T = 25C 1.5 V C CE(dsat) I = 5 Adc, I = 1 Adc Dynamic Saturation C B1 V = 300 V Voltage: CC T = 125C 2.8 V C Determined 3 s after T = 25C 2.4 V rising I reaches 90% of C B1 I = 10 Adc, I = 2 Adc C B1 final I (see Figure 19) B1 V = 300 V CC T = 125C 5 V C DYNAMIC CHARACTERISTICS Current Gain Bandwidth f 23 MHz T (I = 1 Adc, V = 10 Vdc, f = 1 MHz) C CE Output Capacitance C 100 150 pF ob (V = 10 Vdc, I = 0, f = 1 MHz) CB E Input Capacitance C 1300 1750 pF ib (V = 8 Vdc, f = 1 MHz) EB