BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TVs and CRTs. Features High Voltage www.onsemi.com Fast Switching Speed Low Saturation Voltage NPN SILICON These Devices are PbFree and are RoHS Compliant* POWER TRANSISTORS 7 AMPERES 60 WATTS MAXIMUM RATINGS 150 AND 200 VOLTS Rating Symbol Value Unit CollectorEmitter Voltage BU406 V 200 Vdc CEO SCHEMATIC BU407 150 COLLECTOR CollectorEmitter Voltage BU406 V 400 Vdc CEV BU407 330 2,4 CollectorBase Voltage BU406 V 400 Vdc CBO BU407 330 1 EmitterBase Voltage V 6 Vdc BASE EBO Collector Current Continuous I 7 Adc C 3 Peak Repetitive 10 EMITTER Collector Current Peak (10 ms) I 15 Adc CM Base Current I 4 Adc B MARKING P 60 W DIAGRAM Total Device Dissipation T = 25 C C D Derate above 25C 0.48 W/ C Operating and Storage Junction T , T 65 to 150 C 4 J stg Temperature Storage Stresses exceeding those listed in the Maximum Ratings table may damage the TO220 BU40xG device. If any of these limits are exceeded, device functionality should not be CASE 221A assumed, damage may occur and reliability may be affected. AY WW STYLE 1 1 THERMAL CHARACTERISTICS 2 3 1 Characteristics Symbol Max Unit BU40x = Specific Device Code Thermal Resistance, JunctiontoCase R 2.08 C/W JC x = 6 or 7 Thermal Resistance, JunctiontoAmbient R 70 C/W JA A = Assembly Location Y = Year Maximum Lead Temperature for Soldering T 260 C L Purposes1/8 from Case for 5 Seconds WW = Work Week G = PbFree Package ORDERING INFORMATION Device Package Shipping BU406G TO220AB 50 Units / Rail (PbFree) BU407G TO220AB 50 Units / Rail (PbFree) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 11 BU406/DBU406, BU407 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) BU406 V 200 Vdc CEO(sus) (I = 100 mAdc, I = 0) BU407 150 C B Collector Cutoff Current I mAdc CES (V = Rated V , V = 0) CE CEV BE 5 (V = Rated V + 50 Vdc, V = 0) CE CEO BE 0.1 (V = Rated V + 50 Vdc, V = 0, T = 150 C) CE CEO BE C 1 Emitter Cutoff Current BU406, BU407 I 1 mAdc EBO (V = 6 Vdc, I = 0) EB C ON CHARACTERISTICS (Note 1) CollectorEmitter Saturation Voltage V 1 Vdc CE(sat) (I = 5 Adc, I = 0.5 Adc) C B BaseEmitter Saturation Voltage V 1.2 Vdc BE(sat) (I = 5 Adc, I = 0.5 Adc) C B Forward Diode Voltage V 2 Volts EC (I = 5 Adc) D only EC DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f 10 MHz T (I = 0.5 Adc, V = 10 Vdc, f = 20 MHz) C CE test Output Capacitance C 80 pF ob (V = 10 Vdc, I = 0, f = 1 MHz) CB E SWITCHING CHARACTERISTICS Inductive Load Crossover Time t 0.75 s c (V = 40 Vdc, I = 5 Adc, I = I = 0.5 Adc, L = 150 H) CC C B1 B2 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 1%. 100 10 T = 100C J 70 dc 25C 50 BONDING WIRE LIMIT 1 V = 5 V 30 CE THERMAL LIMIT SECOND BREAKDOWN LIMIT 0.1 20 BU407 T = 25C C BU406 10 0.1 0.2 0.3 0.5 0.7 1 23 5 7 10 2 3 57210 0 30 50 70 100 200 I , COLLECTOR CURRENT (AMPS) V , COLLECTOR-EMITTER VOLTAGE (VOLTS) C CE Figure 1. DC Current Gain Figure 2. Maximum Rated Forward Bias Safe Operating Area www.onsemi.com 2 h , DC CURRENT GAIN FE I , COLLECTOR CURRENT (AMP) C