BTA212-800B,127 is a NXP Power MOSFET with low on-state resistance, robust gate performance, and low thermal resistance. It is designed with a dual N-channel MOSFET structure, optimized for high-speed switching, with low gate charge QG, fast body diode characteristics, and fast switching times. Its low on-state resistance RDS(ON) reduces power losses, while its robust gate performance ensures reliable device operation. The BTA212-800B,127 offers an avalanche energy rating of up to 15mJ, suitable for use in inductive load applications, providing improved robustness and reliable operation. It is also suitable for applications requiring low switching losses, fast switching times, and design flexibility. The device is RoHS compliant and offered in a TO-92 package with a pinout of G1-D-S1-S2-G2.