BTA216-600BT,127 NXP

BTA216-600BT Triacs high commutation Rev. 3 20 September 2018 Product data sheet 1. Product profile 1.1 General description Passivated high commutation triac in a plastic envelope. Featuring high maximum junction temperature and high commutation capability. Intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This device will commutate the full rated RMS current at the maximum rated junction temperature, without the aid of a snubber. 1.2 Features and benefits High maximum junction temperature High commutation capability 1.3 Quick reference data V 600 V I 16 A DRM T(RMS) I 50 mA I 140 A GT TSM T 150 C dI /dt=18A/ms j com 2. Pinning information Table 1: Pinning Pin Description Simplified outline Symbol 1 main terminal 1 (T1) mb T2 T1 2 main terminal 2 (T2) G 3 gate (G) sym051 1 mb mounting base 12 3 SOT78 (TO-220AB) 1 Connected to main terminal 2 (T2)BTA216-600BT WeEn Semiconductors Triacs high commutation 3. Ordering information Table 2: Ordering information Type number Package Name Description Version BTA216-600BT TO-220AB plastic single-ended package heatsink mounted 3 leads 1 mounting SOT78 hole 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit 1 V repetitive peak off-state voltage - 600 V DRM I RMS on-state current full sine wave T 124 C -16 A T(RMS) mb see Figure 4 and 5 I non-repetitive peak on-state current full sine wave T = 25 C prior to surge TSM j see Figure 2 and 3 t = 20 ms - 140 A t = 16.7 ms - 150 A 2 2 2 ItI t for fusing t = 10 ms - 98 A s dI /dt rate of rise of on-state current I =20A I = 0.2 A dI /dt = 0.2 A/ s - 100 A/ s T TM G G I peak gate current -2 A GM V peak gate voltage -5 V GM P peak gate power -5 W GM P average gate power over any 20 ms period - 0.5 W G(AV) T storage temperature 40 +150 C stg T junction temperature - 150 C j 1 Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/ s. BTA216-600BT All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet Rev. 3 20 September 2018 2 of 11