BT151X-500C,127 NXP

BT151X-500C SCR 5 September 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F)full pac plastic package intended for use in applications requiring good bidirectional blocking voltage capability and high thermal cycling performance. 2. Features and benefits Good bidirectional blocking voltage capability High thermal cycling performance Isolated mounting base package Planar passivated for voltage ruggedness and reliability 3. Applications Capacitive Discharge Ignition (CDI) Crowbar protection Inrush protection Motor control Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 500 V RRM voltage I average on-state half sine wave T 69 C - - 7.5 A T(AV) h current I RMS on-state current half sine wave T 69 C Fig. 1 - - 12 A T(RMS) h Fig. 2 Fig. 3 I non-repetitive peak on- half sine wave T = 25 C - - 100 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p half sine wave T = 25 C - - 110 A j(init) t = 8.3 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T = 25 C Fig. 7 - 2 15 mA GT D T j Dynamic characteristicsWeEn Semiconductors BT151X-500C SCR Symbol Parameter Conditions Min Typ Max Unit dV /dt rate of rise of off-state V = 335 V T = 125 C R = 100 200 1000 - V/s D DM j GK voltage (V = 67% of V ) exponential DM DRM waveform Fig. 12 V = 335 V T = 125 C (V = 67% 50 130 - V/s DM j DM of V ) exponential waveform gate DRM open circuit Fig. 12 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb A K G 2 A anode sym037 3 G gate mb n.c. mounting base isolated 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT151X-500C TO-220F plastic single-ended package isolated heatsink mounted 1 SOT186A mounting hole 3-lead TO-220full pac BT151X-500C All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 5 September 2018 2 / 12