BT258S-800LT,118 NXP

BT258S-800LT SCR logic level, high temperature 5 September 2018 Product data sheet 1. General description Passivated sensitive gate Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface mountable plastic package intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits Direct interfacing with low power drivers and microcontrollers High bidirectional blocking voltage capability High junction operating temperature capability High thermal cycling performance Planar passivated for voltage ruggedness and reliability Surface mountable package Very sensitive gate for logic level controls 3. Applications General purpose switching and phase control Ignition circuits, CDI for 2- and 3-wheelers Motor control - e.g. small kitchen appliances Protection circuits for Switched-Mode Power Supplies (SMPS) Protection circuits in lighting ballasts 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 800 V RRM voltage I average on-state half sine wave T 135 C Fig. 1 - - 5 A T(AV) mb current I RMS on-state current half sine wave T 135 C Fig. 2 - - 8 A T(RMS) mb Fig. 3 I non-repetitive peak on- half sine wave T = 25 C - - 75 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p half sine wave T = 25 C - - 82 A j(init) t = 8.3 ms p T junction temperature 1 - - 150 C j Static characteristicsWeEn Semiconductors BT258S-800LT SCR logic level, high temperature Symbol Parameter Conditions Min Typ Max Unit I gate trigger current V = 12 V I = 0.1 A T = 25 C Fig. 8 20 - 50 A GT D T j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 150 C R = 100 35 70 - V/s D DM j GK voltage (V = 67% of V ) exponential DM DRM waveform Fig. 13 1 Operation above junction temperatures of 110 C may require the use of a gate to cathode resistor of 1 k or less. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode A K G 2 A anode sym037 3 G gate mb A mounting base connected to anode DPAK (SOT428) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT258S-800LT DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BT258S-800LT All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 5 September 2018 2 / 12