NTE5408 thru NTE5410 Silicon Controlled Rectifier (SCR) 3 Amp Sensitive Gate, TO5 Description: The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and MOS devices. These SCRs feature proprietary, voidfree glasspassivated chips and are hermeti- cally sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and with a gate current of 200A. These NTE SCRs are reverseblocking triode thyristors and may be switched from offstate to con- duction by a current pulse applied to the gate terminal. The NTE5408 through NTE5410 are designed for control applications in lighting, heating, cooling, and static switching relays. Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (T = +100C), V C RRM NTE5408 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5409 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5410 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Repetitive Peak OffState Voltage (T = +100C), V C DRXM NTE5408 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5409 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5410 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On State Current (T = +75C, Conduction Angle of 180), I . . . . . . . . . . . . . . . . . . . 4A C T(RMS) Peak Surge (NonRepetitive) On State Current (One Cycle at 50 or 60Hz), I . . . . . . . . . . . 40A TSM Peak GateTrigger Current (3s Max), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A GTM Peak Gate Power Dissipation (I I for 3s Max), P . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W GT GTM GM Average Gate Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW G(AV) Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +100C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Typical Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5C/W thJCElectrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Peak OffState Current I V = Max, V = Max, 0.75 mA RRM RRM DRXM T = +100C, R = 1k C GK I 0.75 mA DRXM Maximum OnState Voltage V I = 10A (Peak) 2.2 V TM T DC Holding Current I R = 1000 5 mA HOLD GK DC GateTrigger Current I V = 6VDC, R = 100 200 A GT D L DC GateTrigger Voltage V V = 6VDC, R = 100 0.8 V GT D L Gate Controlled TurnOn Time t I x 3 1.2 s gt G GT 2 2 2 I t for Fusing Reference I t For SCR Protection 2.6 A sec Critical Rate of Applied dv/dt R = 1k, T = +100C 5 V/s GK C Forward Voltage (critical) .352 (8.95) Dia Max .325 (8.13) Dia Max .250 (6.35) Max .500 (12.7) Min .019 (0.5) Gate Cathode Anode 45 .031 (.793)