NTE5426 Silicon Controlled Rectifier (SCR) Sensitive Gate, TO220 Isolated Description: The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device may be switched from offstate to conduction by a current pulse applied to the gate terminal and is designed for control applications in lighting, heating, cooling, and static switching relays. Absolute Maximum Ratings: Repetitive Peak OffState Voltage (Gate Open, T = +110C), V . . . . . . . . . . . . . . . . . . . . . 400V C DRM Repetitive Peak Reverse Voltage (Gate Open, T = +110C), V . . . . . . . . . . . . . . . . . . . . . . 400V C RRM RMS On State Current (T = +80C, 180 Conduction Angle), I . . . . . . . . . . . . . . . . . . . . 10A C T(RMS) Peak Surge (NonRepetitive) On State Current (One Cycle, 50 or 60Hz), I . . . . . . . . . . . . . 80A TSM Peak GateTrigger Current (3s max), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A GTM Peak Gate Power Dissipation (I = I ), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W GT GTM GM Average Gate Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW G(AV) Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +100C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Typical Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0C/W thJC Electrical Characteristics: (T = +25C and Maximum Ratings unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Peak OffState Current I , Rated V or V , T = +110C, 0.1 mA DRM DRM RRM C I RG K = 1k RRM Maximum OnState Voltage V I = Rated Amps 2.0 V TM T Gate Trigger Current, Continuous DC I Anode Voltage = 12V, R = 60 200 A GT L Gate Trigger Voltage, Continuous DC V Anode Voltage = 12V, R = 60 0.8 V GT L DC Holding Current I Gate Open, RG K = 1k 3.0 mA H TurnOn Time t (t + t ) I = 150mA 2.5 s gt d r GT Critical Rate of Rise of OffState critical Gate Open, T = +110C, 8 V/s C Voltage dv/dt RG K = 1k.420 (10.67) Max .110 (2.79) Isol .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Cathode Gate .100 (2.54) Anode