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NTE5428

NTE5428 electronic component of NTE
Images are for reference only
See Product Specifications
Part No. NTE5428
Manufacturer: NTE
Category: SCRs
Description: Thyristor; 400V; 7A; 25mA; THT; TO39
Datasheet: NTE5428 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 13.676 ea
Line Total: USD 41.03

2 - Global Stock
Ships to you between
Thu. 30 May to Wed. 05 Jun
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
2 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 3
Multiples : 1
3 : USD 17.38
5 : USD 15.8
25 : USD 13.1125
50 : USD 12.9125
100 : USD 12.35
250 : USD 11.675
500 : USD 11.3625
1000 : USD 11.075

     
Manufacturer
Product Category
Case
Mounting
Type Of Semiconductor Component
Max Load Current
Max Off-State Voltage
Gate Current
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We proudly offer the NTE5428 SCRs at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the NTE5428 SCRs.

NTE5427 thru NTE5429 Silicon Controlled Rectifier (SCR) 7 Amp, TO39 Type Package Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (T = +110 C), V C RRM NTE5427 ................................................................... 200V NTE5428 ................................................................... 400V NTE5429 ................................................................... 600V Repetitive Peak OffState Voltage (T = +110 C), V C DRM NTE5427 ................................................................... 200V NTE5428 ................................................................... 400V NTE5429 ................................................................... 600V RMS OnState Current (T = +80C, Conduction Angle of 180 ), I ................... 7A C T(RMS) Peak Surge (Non Repetitive) On State Current (One Cycle at 50 or 60Hz), I ........... 80A TSM Peak GateTrigger Current (3 s Max), I ............................................ 1A GTM Peak Gate Power Dissipation (I I ), P ...................................... 20W GT GTM GM Average Gate Power Dissipation, P .......................................... 500mW G(AV) Operating Temperature Range, T ......................................... 40 to +110 C opr Storage Temperature Range, T .......................................... 40 to +150C stg Typical Thermal Resistance, Junction toCase, R .............................. 2.5 C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit I 1 mA Peak OffState Current V = Max, V = Max, RRM RRM DRM T = +110 C, R = 1k C GK I 1 mA DRM Maximum OnState Voltage V I = 7A 2 V TM T DC Holding Current I 50 mA HOLD DC GateTrigger Current I V = 6VDC, R = 100 25 mA GT D L DC GateTrigger Voltage V V = 6VDC, R = 100 1.5 V GT D L Gate Controlled TurnOn Time t I x 3 2 s gt G GT 2 2 2 I t for Fusing Reference I t For SCR Protection 2.6 A sec Critical Rate of OffState Voltage dv/dt Gate Open, T = +100C 100 V/ s C (critical) Rev. 1117.370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.06) Max .500 (12.7) Min .019 (0.5) Gate Cathode Anode 45 .031 (.793)

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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