BTW69-1200N 50 A 1200 V non insulated SCR thyristor Datasheet - production data A Description Available in non insulated TOP3 high power package, the BTW69-1200N is suitable for G applications where power switching and power dissipation are critical, such as by-pass switch, K controlled AC rectifier bridge, in solid state relay, battery charger, uninterruptible power supply, A welding equipment and motor driver applications. Based on a clip assembly technology, the BTW69-1200N offers a superior performance in surge current handling and thermal cooling K capabilities. A G Table 1. Device summary TOP3 non insulated Symbol Value I 50 A T(RMS) V /V 1200 V DRM RRM Features I 50 mA GT On-state rms current: 50 A Blocking voltage: 1200 V Gate current: 50 mA Applications Solid state relay Battery charging system Uninterruptible power supply Variable speed motor drive Industrial welding systems By pass AC switch June 2013 DocID024685 Rev 1 1/9 This is information on a product in full production. www.st.comCharacteristics BTW69-1200N 1 Characteristics Table 2. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit I On-state current rms (180 conduction angle) T = 102 C 50 A T(RMS) c IT Average on-state current (180 conduction angle) T = 102 C 31 A (AV) c t = 8.3 ms 763 p Non repetitive surge peak on-state I T = 25 C A TSM j current t = 10 ms 700 p 2 ItI t Value t = 10 ms T = 25 C 2450 A S p j Critical rate of rise of on-state current dI/dt 100 A/s Gate supply: I = 100 mA, dI /dt = 1 A/s G G I Peak gate current t = 20 s T = 125 C 8 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 125 j V Maximum peak reverse gate voltage 5 V GM Table 3. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Value Unit MIN. 8 I mA GT V = 12 V, R = 33 MAX. 50 D L V MAX. 1.3 V GT V V = V R = 3.3 k T = 125 C MIN. 0.2 V GD D DRM, L j I I = 500 mA, gate open MAX. 100 mA H T I I = 1.2 x I TYP. 125 mA L G GT t I = 50 A, V = V , I = 200 mA, dI /dt = 0.2 A/s TYP. 2 s gt T D DRM G G dV/dt V = 67% V gate open T = 125 C MIN. 1000 V/s D DRM, j V = 800 V, I = 50 A, V = 75 V, D TM R t t = 100 s, dI /dt = 30 A/s, T = 125 C TYP. 100 s q p TM j dV /dt = 20 V/s D V I = 100 A, t = 380 s T = 25 C MAX. 1.6 V TM TM p j V Threshold voltage T = 125 C MAX. 0.9 V t0 j R Dynamic resistance T = 125 C MAX. 8.5 m D j T = 25 C 10 A I V = V j DRM D DRM MAX. I V = V RRM R RRM T = 125 C 5 mA j 2/9 DocID024685 Rev 1