BT152-500RT NXP

BT152-500RT SCR Rev. 2 9 June 2011 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier in a SOT78 (TO-220AB) plastic package intended for use in applications requiring very high inrush current capability, high junction temperature capability and high thermal cycling performance. 1.2 Features and benefits High junction temperature capability Planar passivated for voltage ruggedness and reliability High thermal cycling performance Very high current surge capability 1.3 Applications Ignition circuits Protection circuits e.g. SMPS inrush current Motor control Voltage regulation 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit repetitive peak off-state --500V V DRM voltage V repetitive peak reverse --500V RRM voltage I non-repetitive peak half sine wave T =25C --220A TSM j(init) on-state current t =8.3 ms p =25C --200A half sine wave T j(init) t = 10 ms see Figure 4 p see Figure 5 I average on-state half sine wave T 122 C --13 A T(AV) mb current see Figure 3 RMS on-state current half sine wave see Figure 1 --20 A I T(RMS) see Figure 2 Static characteristics I gate trigger current V =12V I =100 mA -3 32 mA GT D T T =25 C see Figure 7 j TO-220ABBT152-500RT NXP Semiconductors SCR 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb AK 2 A anode G 3 G gate sym037 mb A mounting base connected to anode 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BT152-500RT TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak off-state voltage - 500 V DRM V repetitive peak reverse voltage - 500 V RRM I average on-state current half sine wave T 122 C see Figure 3 -13 A T(AV) mb I RMS on-state current half sine wave see Figure 1 see Figure 2 -20 A T(RMS) I non-repetitive peak on-state half sine wave T =25C t = 8.3 ms - 220 A TSM j(init) p current half sine wave T =25C t = 10 ms - 200 A j(init) p see Figure 4 see Figure 5 2 2 2 ItI t for fusing t = 10 ms sine-wave pulse - 200 A s p dI /dt rate of rise of on-state current I =50A I = 200 mA dI /dt = 200 mA/s - 200 A/s T T G G I peak gate current - 5 A GM V peak reverse gate voltage - 5 V RGM P peak gate power - 20 W GM P average gate power over any 20 ms period - 1 W G(AV) T storage temperature -40 150 C stg T junction temperature - 150 C j BT152-500RT All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 9 June 2011 2 of 12