BT169G NXP

BT169G SCR 20 March 2014 Product data sheet 1. General description Planar passivated sensitive gate Silicon Controlled Rectifier in a SOT54 (T0-92) plastic package. 2. Features and benefits High voltage capability Planar passivated for voltage ruggedness and reliability Sensitive gate 3. Applications Ignition circuits Lighting ballasts Protection circuits Switched Mode Power Supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage V repetitive peak reverse - - 600 V RRM voltage I non-repetitive peak on- half sine wave T = 25 C - - 8 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p I average on-state half sine wave T 83 C Fig. 1 - - 0.5 A T(AV) lead current I RMS on-state current half sine wave T 83 C Fig. 2 - - 0.8 A T(RMS) lead Fig. 3 Static characteristics I gate trigger current V = 12 V I = 10 mA T = 25 C - 50 200 mA GT D T j Fig. 7 Scan or click this QR code to view the latest information for this product TO-92NXP Semiconductors BT169G SCR 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A anode A K G 2 G gate sym037 3 K cathode 3 2 1 TO-92 (SOT54) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT169G TO-92 plastic single-ended leaded (through hole) package 3 leads SOT54 BT169G/DG TO-92 plastic single-ended leaded (through hole) package 3 leads SOT54 BT169G All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 20 March 2014 2 / 13