BYV26DGP, BYV26EGP www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Plastic Rectifier FEATURES Superectifier structure for high reliability condition Cavity-free glass passivated pellet chip junction Superectier Ultrafast reverse recovery time Low forward voltage drop Low switching losses, high efficiency High forward surge capability Solder dip 275 C max. 10 s, per JESD 22-B106 DO-15 (DO-204AC) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in high frequency rectification and freewheeling I 1.0 A F(AV) application in switching mode converters and inverters for V 800 V, 1000 V RRM consumer, computer and telecommunication. I 30 A FSM t 75 ns MECHANICAL DATA rr Case: DO-15 (DO-204AC), molded epoxy over glass body V at I 1.3 V F F Molding compound meets UL 94 V-0 flammability rating T max. 175 C J Base P/N-E3 - RoHS-compliant, commercial grade Package DO-15 (DO-204AC) Terminals: Matte tin plated leads, solderable per Circuit configuration Single J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL BYV26DGP BYV26EGP UNIT Maximum repetitive peak reverse voltage V 800 1000 V RRM Maximum RMS voltage V 560 700 V RMS Maximum DC blocking voltage V 800 1000 V DC Maximum average forward rectified current 0.375 (9.5 mm) I 1.0 A F(AV) lead length (fig. 1) Peak forward surge current 10 ms single half sine-wave I 30 A FSM superimposed on rated load (1) 10 mJ Non repetitive peak reverse energy E RSM Operating junction and storage temperature range T , T -65 to +175 C J STG Note (1) Peak reverse energy measured at I = 400 mA, T = T max. on inductive load, t = 20 s R J J Revision: 29-Apr-2020 Document Number: 88554 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BYV26DGP, BYV26EGP www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL BYV26DGP BYV26EGP UNIT Minimum avalanche breakdown voltage 100 A V 900 1100 V BR T = 25 C 2.5 J Maximum instantaneous forward voltage 1.0 A V V F T = 175 C 1.3 J T = 25 C 5.0 A Maximum DC reverse current at rated DC I A R blocking voltage T = 165 C 150 A I = 0.5 A, I = 1.0 A, F R Max. reverse recovery time t 75 ns rr I = 0.25 A rr Typical junction capacitance 4.0 V, 1 MHz C 15 pF J THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL BYV26DGP BYV26EGP UNIT (1) R 70 JA Typical thermal resistance C/W (2) R 16 JL Notes (1) Thermal resistance from junction to ambient at 0.375 (9.5 mm) lead length, mounted on PCB with 0.5 x 0.5 (12 mm x 12 mm) copper pads (2) Thermal resistance from junction to lead at 0.375 (9.5 mm) lead length with both leads attached to heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BYV26EGP-E3/54 0.428 54 4000 13 diameter paper tape and reel BYV26EGP-E3/73 0.428 73 2000 Ammo pack packaging Revision: 29-Apr-2020 Document Number: 88554 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000