Product Information

BYV32E-200,127

BYV32E-200,127 electronic component of NXP

Datasheet
Rectifiers FAST DUAL 20A 200V
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.8072 ea
Line Total: USD 1.81

11749 - Global Stock
Ships to you between
Wed. 22 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
10700 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 1.2075
10 : USD 1.0396
100 : USD 0.8326
500 : USD 0.721
1000 : USD 0.6003
2000 : USD 0.5842
5000 : USD 0.5566
10000 : USD 0.5382

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Product
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

BYV32E-200 Dual rugged ultrafast rectifier diode, 20 A, 200 V Rev.05 - 7 March 2018 Product data sheet 1. General description Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package. 2. Features and benefits High reverse voltage surge capability High thermal cycling performance Low thermal resistance Very low on-state loss Soft recovery characteristic minimizes power consuming oscillations 3. Applications Output rectifiers in high-frequency switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 200 V RRM voltage I average output current = 0.5 square-wave pulse T 115 C 20 A O(AV) mb both diodes conducting Fig. 1 Fig. 2 I repetitive peak reverse = 0.001 t = 2 s 0.2 A RRM p current V electrostatic discharge HBM C = 250 pF R = 1.5 k all pins 8 kV ESD voltage I repetitive peak forward = 0.5 t = 25 s T 115 C 20 A FRM p mb current per diode I non-repetitive peak t = 10 ms sine-wave pulse T = 25 C 125 A FSM p j(init) forward current per diode t = 8.3 ms sine-wave pulse T = 25 C 137 A p j(init) per diode Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 8 A T = 150 C Fig. 4 - 0.72 0.85 V F F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 100 A/s - 20 25 ns rr F R F T = 25 C ramp recovery Fig. 5 j I = 0.5 A to I = 1 A T = 25 C - 10 20 ns F R j measured at I = 0.25 A step recovery R Fig. 6WeEn Semiconductors BYV32E-200 Dual rugged ultrafast rectifier diode, 20 A, 200 V 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 A1 anode 1 2 K cathode A1 A2 3 A2 anode 2 K mb K mounting base cathode sym125 12 3 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV32E-200 TO-220AB plastic single-ended package heatsink mounted SOT78 1 mounting hole 3-lead TO-220AB 7. Marking Table 4. Marking codes Type number Marking codes BYV32E-200 BYV32E-200 BYV32E-200 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 7 March 2018 2 / 11

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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